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arXiv · 2404.05663

Significant Photoluminescence Improvements from Bulk Germanium-Based Thin Films with Ultra-low Threading Dislocation Densities

Liming Wang·Gideon Kassa·Jifeng Liu·Guangrui Xia
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Abstract

Bulk Ge crystals, characterized by significantly lower threading dislocation densities than their epitaxial counterparts, emerge as optimal candidates for studying and improving Ge laser performance. Our study focused on the Ge thickness and TDD impacts on Ge photoluminescence.

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Liming Wang, Gideon Kassa, Jifeng Liu, Guangrui Xia. 2024-04-08. Significant Photoluminescence Improvements from Bulk Germanium-Based Thin Films with Ultra-low Threading Dislocation Densities. https://arxiv.org/abs/2404.05663

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