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arXiv · 2404.08427

Selective-Area Epitaxy of Bulk-Insulating (Bi$_x$Sb$_{1-x}$)$_2$Te$_3$ Films and Nanowires by Molecular Beam Epitaxy

Gertjan Lippertz·Oliver Breunig·Rafael Fister·Anjana Uday·Andrea Bliesener·Jens Brede·Alexey Taskin·Yoichi Ando
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Abstract

The selective-area epitaxy (SAE) is a useful technique to grow epitaxial films with a desired shape on a pre-patterned substrate. Although SAE of patterned topological-insulator (TI) thin films has been performed in the past, there has been no report of SAE-grown TI structures that are bulk-insulating. Here we report the successful growth of Hall-bars and nanowires of bulk-insulating TIs using the SAE technique. Their transport properties show that the quality of the selectively-grown structures is comparable to that of bulk-insulating TI films grown on pristine substrates. In SAE-grown TI nanowires, we were able to observe Aharonov-Bohm-like magnetoresistance oscillations that are characteristic of the quantum-confined topological surface states. The availability of bulk-insulating TI nanostructures via the SAE technique opens the possibility to fabricate intricate topological devices in a scalable manner.

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Gertjan Lippertz, Oliver Breunig, Rafael Fister, Anjana Uday, Andrea Bliesener, Jens Brede, Alexey Taskin, Yoichi Ando. 2024-04-12. Selective-Area Epitaxy of Bulk-Insulating (Bi$_x$Sb$_{1-x}$)$_2$Te$_3$ Films and Nanowires by Molecular Beam Epitaxy. https://doi.org/10.1021/acsami.4c06146

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