arXiv subjects

Oliver Breunig

Publications and source records attributed to Oliver Breunig.

13 recordsLinked to original sources

arXiv2026

Fabrication of high-quality topological insulator nanodevices from bulk-insulating air-sensitive Sb-Bi$_2$Se$_3$

High-quality topological insulator (TI) materials are essential for the realization and detection of Majorana bound states (MBSs) in TI-superconductor hybrid platforms. Widely used compensated TIs exhibit substantial disorder and charge inhomogeneity, which may be detrimental for Majorana devices. In this regard, Sb-substituted Bi$_2$Se$_3$ (SBS) is promising, because it is non-compensated and yet achieves very low bulk carrier density. We systematically investigate the impact of thermal processing during microfabrication on the transport properties of SBS. We developed a room-temperature fabrication protocol that preserves the low carrier density of exfoliated SBS upon fabrication of Hall bar and nanowire devices as evidenced from the observation of quantum interference oscillations in nanowires, a large gate tunability, and clear signatures of weak antilocalization (WAL).

cond-mat.mes-hall↗

arXiv2026

Topological insulator single-electron transistors for charge sensing applications

We present topological insulator (TI)-based single-electron transistors (SETs) as magnetic-field-compatible charge sensing devices that are easily integrable with TI-superconductor hybrid platforms. We observe well-resolved Coulomb diamonds in the charge-stability diagrams of our devices confirming the charge quantization and single-electron transport. In some devices, the Coulomb resonances show persistent shifts corresponding up to $\sim$ e/2 charge. An axial magnetic field further displaces these shifts to higher or lower gate voltages. We find that the axial magnetic-field dependence of the shifts is consistent with the Zeeman shift of a trap state coupled to the SET, and we reproduce the observations using numerical simulations. The resonance shifts are therefore identified as a consequence of the sensitivity of our TI-SET devices to charges in proximity. Establishing this charge sensing capability is a first step toward integrating TI-SETs as charge sensors in more complex TI-based hybrid devices, with the overarching goal of detecting and braiding Majorana zero modes.

cond-mat.mes-hall↗

arXiv2025

Ex Situ Fabrication of Superconducting Nanostructures for Low-Temperature STM

Nanofabrication of topological insulator (TI) devices is essential for accessing edge and interface states, but conventional lithography and etching compromise the atomically clean surfaces required for scanning tunneling microscopy and spectroscopy (STM/STS). We demonstrate a fabrication strategy that combines ex situ lithographic patterning with in situ ultrahigh-vacuum cleaving and flipping, yielding atomically clean, nanopatterned TI-superconductor heterostructures suitable for STM/STS. In Design I, nanoribbons were defined by etching trenches into a TI film and capping with Nb. This enabled spectroscopy on large areas, although edge quality was limited by etch debris. In Design II, local thinning defined buried nanoribbons within a continuous TI film, producing pristine planar surfaces. STM/STS revealed well-developed superconducting gaps in the surrounding film, with suppressed gaps on the nanoribbons, consistent with vertical proximity coupling. This approach establishes a reproducible pathway for high-resolution STM/STS studies of proximitized nanostructures, providing a scalable platform for exploring topological superconductivity.

cond-mat.mtrl-sci↗

arXiv2024

Experimental observation of repulsively bound magnons

Stable composite objects, such as hadrons, nuclei, atoms, molecules and superconducting pairs, formed by attractive forces are ubiquitous in nature. By contrast, composite objects stabilized by means of repulsive forces were long thought to be theoretical constructions owing to their fragility in naturally occurring systems. Surprisingly, the formation of bound atom pairs by strong repulsive interactions has been demonstrated experimentally in optical lattices. Despite this success, repulsively bound particle pairs were believed to have no analogue in condensed matter owing to strong decay channels. Here we present spectroscopic signatures of repulsively bound three-magnon states and bound magnon pairs in the Ising-like chain antiferromagnet BaCo$_2$V$_2$O$_8$. In large transverse fields, below the quantum critical point, we identify repulsively bound magnon states by comparing terahertz spectroscopy measurements to theoretical results for the Heisenberg-Ising chain antiferromagnet, a paradigmatic quantum many-body model. Our experimental results show that these high-energy repulsively bound magnon states are well separated from continua, exhibit significant dynamical responses and, despite dissipation, are sufficiently long-lived to be identified. As the transport properties in spin chains can be altered by magnon bound states, we envision such states could serve as resources for magnonics based quantum information processing technologies.

cond-mat.str-el↗

arXiv2024

Selective-Area Epitaxy of Bulk-Insulating (Bi$_x$Sb$_{1-x}$)$_2$Te$_3$ Films and Nanowires by Molecular Beam Epitaxy

The selective-area epitaxy (SAE) is a useful technique to grow epitaxial films with a desired shape on a pre-patterned substrate. Although SAE of patterned topological-insulator (TI) thin films has been performed in the past, there has been no report of SAE-grown TI structures that are bulk-insulating. Here we report the successful growth of Hall-bars and nanowires of bulk-insulating TIs using the SAE technique. Their transport properties show that the quality of the selectively-grown structures is comparable to that of bulk-insulating TI films grown on pristine substrates. In SAE-grown TI nanowires, we were able to observe Aharonov-Bohm-like magnetoresistance oscillations that are characteristic of the quantum-confined topological surface states. The availability of bulk-insulating TI nanostructures via the SAE technique opens the possibility to fabricate intricate topological devices in a scalable manner.

cond-mat.mtrl-sci↗

arXiv2023

Topological insulator spin transistor

When a charge current is injected into the surface state of a topological insulator (TI), the resulting shift of the spin-momentum-locked Fermi surface leads to the appearance of a net spin polarization. The helical spin structure of the Dirac-cone surface state of a TI should lead to a fixed sign of this spin polarization for a given current direction, but experimentally, both signs that agree and disagree with the theory expectation for the surface state Dirac cone have been observed in the past. Although the origin of the wrong sign has not been conclusively elucidated, this observation points to the possibility that one may switch the spin polarization at will to realize a spin transistor operation. Here we report the observation of both signs of spin polarization in the very same device and demonstrate the tunability between the two by electrostatic gating, which gives a proof of principle of a topological insulator spin transistor. This switching behaviour is explained using a minimal model of competing contributions from the topological surface state and trivial Rashba-split states.

cond-mat.mes-hall↗

arXiv2022

Giant magnetochiral anisotropy from quantum confined surface states of topological insulator nanowires

Wireless technology relies on the conversion of alternating electromagnetic fields to direct currents, a process known as rectification. While rectifiers are normally based on semiconductor diodes, quantum mechanical non-reciprocal transport effects that enable highly controllable rectification have recently been discovered. One such effect is magnetochiral anisotropy (MCA), where the resistance of a material or a device depends on both the direction of current flow and an applied magnetic field. However, the size of rectification possible due to MCA is usually extremely small, because MCA relies on inversion symmetry breaking leading to the manifestation of spin-orbit coupling, which is a relativistic effect. In typical materials the rectification coefficient $γ$ due to MCA is usually $|γ| \lesssim 1$ ${\rm A^{-1} T^{-1}}$ and the maximum values reported so far are $|γ| \sim 100$ ${\rm A^{-1} T^{-1}}$ in carbon nanotubes and ZrTe$_5$. Here, to overcome this limitation, we artificially break inversion symmetry via an applied gate voltage in thin topological insulator (TI) nanowire heterostructures and theoretically predict that such a symmetry breaking can lead to a giant MCA effect. Our prediction is confirmed via experiments on thin bulk-insulating (Bi$_{1-x}$Sb$_{x}$)$_2$Te$_3$ TI nanowires, in which we observe an MCA consistent with theory and $|γ| \sim 100000$ ${\rm A^{-1} T^{-1}}$, the largest ever reported MCA rectification coefficient in a normal conductor.

cond-mat.mes-hall↗

arXiv2021

Opportunities in topological insulator devices

Topological insulators (TIs) are expected to be a promising platform for novel quantum phenomena, whose experimental realizations require sophisticated devices. In this Technical Review, we discuss four topics of particular interest for TI devices: topological superconductivity, quantum anomalous Hall insulator as a platform for exotic phenomena, spintronic functionalities, and topological mesoscopic physics. We also discuss the present status and technical challenges in TI device fabrications to address new physics.

cond-mat.mes-hall↗

arXiv2019

Quantum confinement of the Dirac surface states in topological-insulator nanowires

The non-trivial topology of the three-dimensional (3D) topological insulator (TI) dictates the appearance of gapless Dirac surface states. Intriguingly, when a 3D TI is made into a nanowire, a gap opens at the Dirac point due to the quantum confinement, leading to a peculiar Dirac sub-band structure. This gap is useful for, e.g., future Majorana qubits based on TIs. Furthermore, these Dirac sub-bands can be manipulated by a magnetic flux and are an ideal platform for generating stable Majorana zero modes (MZMs), which play a key role in topological quantum computing. However, direct evidence for the Dirac sub-bands in TI nanowires has not been reported so far. Here we show that by growing very thin ($\sim$40-nm diameter) nanowires of the bulk-insulating topological insulator (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ and by tuning its chemical potential across the Dirac point with gating, one can unambiguously identify the Dirac sub-band structure. Specifically, the resistance measured on gate-tunable four-terminal devices was found to present non-equidistant peaks as a function of the gate voltage, which we theoretically show to be the unique signature of the quantum-confined Dirac surface states. These TI nanowires open the way to address the topological mesoscopic physics, and eventually the Majorana physics when proximitised by an $s$-wave superconductor.

cond-mat.mes-hall↗

arXiv2019

Large positive magneto-conductivity at microwave frequencies in the compensated topological insulator BiSbTeSe2

The bulk electronic properties of compensated topological insulators are strongly affected by the self-organized formation of charge puddles at low temperature, but their response in the microwave frequency range is little studied. We employed broadband impedance spectroscopy up to 5 GHz to address the ac transport properties of well-compensated BiSbTeSe2, where charge puddles are known to form as metallic entities embedded in an insulating host. It turns out that the average puddle size sets the characteristic frequency cut-off in the GHz range, across which the insulating dc behavior is separated from a metal-like high-frequency response of delocalized carriers within the puddles. The cut-off frequency is found to be controlled by a magnetic field, giving rise to a large positive magneto-conductivity observable only in the GHz range. This curious phenomenon is driven by the Zeeman energy which affects the local band filling in the disordered potential landscape to enhance the puddle size.

cond-mat.str-el↗

arXiv2018

Anomalous Fraunhofer patterns in gated Josephson junctions based on the bulk-insulating topological insulator BiSbTeSe2

One-dimensional Majorana modes are predicated to form in Josephson junctions based on three-dimensional topological insulators (TIs). While observations of supercurrents in Josephson junctions made on bulk-insulating TI samples are recently reported, the Fraunhofer patters observed in such TI-based Josephson junctions, which sometimes present anomalous features, are still not well understood. Here we report our study of highly gate-tunable TI-based Josephson junctions made of one of the most bulk-insulating TI materials, BiSbTeSe2, and Al. The Fermi level can be tuned by gating across the Dirac point, and the high transparency of the Al/BiSbTeSe2 interface is evinced by a high characteristic voltage and multiple Andreev reflections with peak indices reaching 12. Anomalous Fraunhofer patterns with missing lobes were observed in the entire range of gate voltage. We found that, by employing an advanced fitting procedure to use the maximum entropy method in a Monte Carlo algorithm, the anomalous Fraunhofer patterns are explained as a result of inhomogeneous supercurrent distributions on the TI surface in the junction. Besides establishing a highly promising fabrication technology, this work clarifies one of the important open issues regarding TI-based Josephson junctions.

cond-mat.mes-hall↗

arXiv2017

Quantum criticality in the spin-${1}/{2}$ Heisenberg chain system copper pyrazine dinitrate

The magnetic insulator copper pyrazine dinitrate comprises antiferromagnetic spin-1/2 chains that are well described by the exactly solvable one-dimensional Heisenberg model, providing a unique opportunity for a quantitative comparison between theory and experiment. Here, we investigate its thermodynamic properties with a particular focus on the field-induced quantum phase transition. Thermal expansion, magnetostriction, specific heat, magnetization and magnetocaloric measurements are found to be in excellent agreement with predictions from exact Bethe-Ansatz results as well as from effective field theory. Close to the critical field, thermodynamics obeys the expected quantum critical scaling behavior, and, in particular, the magnetocaloric effect and the Grüneisen parameters diverge in a characteristic manner. Apart from realizing a paradigm of quantum criticality, our study instructively illustrates fundamental principles of quantum critical thermodynamics.

cond-mat.str-el↗

arXiv2017

Gigantic negative magnetoresistance in a disordered topological insulator

With the recent discovery of Weyl semimetals, the phenomenon of negative magnetoresistance (MR) is attracting renewed interest. While small negative MR can occur due to the suppression of spin scattering or weak localization, large negative MR is rare in materials, and when it happens, it is usually related to magnetism. The large negative MR in Weyl semimetals is peculiar in that it is unrelated to magnetism and comes from chiral anomaly. Here we report that there is a new mechanism for large negative MR which is not related to magnetism but is related to disorder. In the newly-synthesized bulk-insulating topological insulator TlBi$_{0.15}$Sb$_{0.85}$Te$_2$, we observed gigantic negative MR reaching 98% in 14 T at 10 K, which is unprecedented in a nonmagnetic system. Supported by numerical simulations, we argue that this phenomenon is likely due to the Zeeman effect on a barely percolating current path formed in the disordered bulk. Since disorder can also lead to non-saturating linear MR in Ag$_{2+δ}$Se, the present finding suggests that disorder engineering in narrow-gap systems is useful for realizing gigantic MR in both positive and negative directions.

cond-mat.mes-hall↗