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arXiv · 2404.10334

Spin Hall Nano-Oscillator Empirical Electrical Model for Optimal On-chip Detector Design

Rafaella Fiorelli·Mona Rajabali·Roberto Méndez-Romero·Akash Kumar·Artem Litvinenko·Teresa Serrano-Gotarredona·Farshad Moradi·Johan Åkerman·Bernabé Linares-Barranco·Eduardo Peralías
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Abstract

As nascent nonlinear oscillators, nano-constriction spin Hall nano-oscillators (SHNOs) represent a promising potential for integration into more complicated systems such as neural networks, magnetic field sensors, and radio frequency (RF) signal classification, their tunable high-frequency operating regime, easy synchronization, and CMOS compatibility can streamline the process. To implement SHNOs in any of these networks, the electrical features of a single device are needed before designing the signal detection CMOS circuitry. This study centers on presenting an empirical electrical model of the SHNO based on a comprehensive characterization of the output impedance of a single SHNO, and its available output power in the range of 2-10 GHz at various bias currents.

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Rafaella Fiorelli, Mona Rajabali, Roberto Méndez-Romero, Akash Kumar, Artem Litvinenko, Teresa Serrano-Gotarredona, Farshad Moradi, Johan Åkerman, Bernabé Linares-Barranco, Eduardo Peralías. 2024-04-16. Spin Hall Nano-Oscillator Empirical Electrical Model for Optimal On-chip Detector Design. https://doi.org/10.1109/ted.2024.3410245

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