arXiv subjects

Bernabé Linares-Barranco

Publications and source records attributed to Bernabé Linares-Barranco.

8 recordsLinked to original sources

arXiv2025

A Fully Digital Relaxation-Aware Analog Programming Technique for HfOx RRAM Arrays

For neuromorphic engineering to emulate the human brain, improving memory density with low power consumption is an indispensable but challenging goal. In this regard, emerging RRAMs have attracted considerable interest for their unique qualities like low power consumption, high integration potential, durability, and CMOS compatibility. Using RRAMs to imitate the more analog storage behavior of brain synapses is also a promising strategy for further improving memory density and power efficiency. However, RRAM devices display strong stochastic behavior, together with relaxation effects, making it more challenging to precisely control their multi-level storage capability. To address this, researchers have reported different multi-level programming strategies, mostly involving the precise control of analog parameters like compliance current during write operations and/or programming voltage amplitudes. Here, we present a new fully digital relaxation-aware method for tuning the conductance of analog RRAMs. The method is based on modulating digital pulse widths during erase operations while keeping other parameters fixed, and therefore requires no precise alterations to analog parameters like compliance currents or programming voltage amplitudes. Experimental results, with and without relaxation effect awareness, on a 64 RRAM 1T1R HfOx memory array of cells, fabricated in 130nm CMOS technology, indicate that it is possible to obtain 2-bit memory per cell multi-value storage at the array level, verified 1000 seconds after programming.

cs.ET↗

arXiv2024

Spin Hall Nano-Oscillator Empirical Electrical Model for Optimal On-chip Detector Design

As nascent nonlinear oscillators, nano-constriction spin Hall nano-oscillators (SHNOs) represent a promising potential for integration into more complicated systems such as neural networks, magnetic field sensors, and radio frequency (RF) signal classification, their tunable high-frequency operating regime, easy synchronization, and CMOS compatibility can streamline the process. To implement SHNOs in any of these networks, the electrical features of a single device are needed before designing the signal detection CMOS circuitry. This study centers on presenting an empirical electrical model of the SHNO based on a comprehensive characterization of the output impedance of a single SHNO, and its available output power in the range of 2-10 GHz at various bias currents.

cond-mat.mes-hall↗

arXiv2023

Empirical study on the efficiency of Spiking Neural Networks with axonal delays, and algorithm-hardware benchmarking

The role of axonal synaptic delays in the efficacy and performance of artificial neural networks has been largely unexplored. In step-based analog-valued neural network models (ANNs), the concept is almost absent. In their spiking neuroscience-inspired counterparts, there is hardly a systematic account of their effects on model performance in terms of accuracy and number of synaptic operations.This paper proposes a methodology for accounting for axonal delays in the training loop of deep Spiking Neural Networks (SNNs), intending to efficiently solve machine learning tasks on data with rich temporal dependencies. We then conduct an empirical study of the effects of axonal delays on model performance during inference for the Adding task, a benchmark for sequential regression, and for the Spiking Heidelberg Digits dataset (SHD), commonly used for evaluating event-driven models. Quantitative results on the SHD show that SNNs incorporating axonal delays instead of explicit recurrent synapses achieve state-of-the-art, over 90% test accuracy while needing less than half trainable synapses. Additionally, we estimate the required memory in terms of total parameters and energy consumption of accomodating such delay-trained models on a modern neuromorphic accelerator. These estimations are based on the number of synaptic operations and the reference GF-22nm FDX CMOS technology. As a result, we demonstrate that a reduced parameterization, which incorporates axonal delays, leads to approximately 90% energy and memory reduction in digital hardware implementations for a similar performance in the aforementioned task.

cs.ET↗

arXiv2023

A Memristor-Inspired Computation for Epileptiform Signals in Spheroids

In this paper we present a memristor-inspired computational method for obtaining a type of running spectrogram or fingerprint of epileptiform activity generated by rodent hippocampal spheroids. It can be used to compute on the fly and with low computational cost an alert-level signal for epileptiform events onset. Here, we describe the computational method behind this fingerprint technique and illustrate it using epileptiform events recorded from hippocampal spheroids using a microelectrode array system.

eess.SP↗

arXiv2022

Effect of Device Mismatches in Differential Oscillatory Neural Networks

Analog implementation of Oscillatory Neural Networks (ONNs) has the potential to implement fast and ultra-low-power computing capabilities. One of the drawbacks of analog implementation is component mismatches which cause desynchronization and instability in ONNs. Emerging devices like memristors and VO2 are particularly prone to variations. In this paper, we study the effect of component mismatches on the performance of differential ONNs (DONNs). Mismatches were considered in two main blocks: differential oscillatory neurons and synaptic circuits. To measure DONN tolerance to mismatches in each block, performance was evaluated with mismatches being present separately in each block. Memristor-bridge circuits with four memristors were used as the synaptic circuits. The differential oscillatory neurons were based on VO2-devices. The simulation results showed that DONN performance was more vulnerable to mismatches in the components of the differential oscillatory neurons than to mismatches in the synaptic circuits. DONNs were found to tolerate up to 20% mismatches in the memristance of the synaptic circuits. However, mismatches in the differential oscillatory neurons resulted in non-uniformity of the natural frequencies, causing desynchronization and instability. Simulations showed that 0.5% relative standard deviation (RSD) in natural frequencies can reduce DONN performance dramatically. In addition, sensitivity analyses showed that the high threshold voltage of VO2-devices is the most sensitive parameter for frequency non-uniformity and desynchronization.

eess.SY↗

arXiv2022

MemTorch: An Open-source Simulation Framework for Memristive Deep Learning Systems

Memristive devices have shown great promise to facilitate the acceleration and improve the power efficiency of Deep Learning (DL) systems. Crossbar architectures constructed using these Resistive Random-Access Memory (RRAM) devices can be used to efficiently implement various in-memory computing operations, such as Multiply Accumulate (MAC) and unrolled-convolutions, which are used extensively in Deep Neural Networks (DNNs) and Convolutional Neural Networks (CNNs). However, memristive devices face concerns of aging and non-idealities, which limit the accuracy, reliability, and robustness of Memristive Deep Learning Systems (MDLSs), that should be considered prior to circuit-level realization. This Original Software Publication (OSP) presents MemTorch, an open-source framework for customized large-scale memristive DL simulations, with a refined focus on the co-simulation of device non-idealities. MemTorch also facilitates co-modelling of key crossbar peripheral circuitry. MemTorch adopts a modernized soft-ware engineering methodology and integrates directly with the well-known PyTorch Machine Learning (ML) library

cs.ET↗

arXiv2022

2022 Roadmap on Neuromorphic Computing and Engineering

Modern computation based on the von Neumann architecture is today a mature cutting-edge science. In the Von Neumann architecture, processing and memory units are implemented as separate blocks interchanging data intensively and continuously. This data transfer is responsible for a large part of the power consumption. The next generation computer technology is expected to solve problems at the exascale with 1018 calculations each second. Even though these future computers will be incredibly powerful, if they are based on von Neumann type architectures, they will consume between 20 and 30 megawatts of power and will not have intrinsic physically built-in capabilities to learn or deal with complex data as our brain does. These needs can be addressed by neuromorphic computing systems which are inspired by the biological concepts of the human brain. This new generation of computers has the potential to be used for the storage and processing of large amounts of digital information with much lower power consumption than conventional processors. Among their potential future applications, an important niche is moving the control from data centers to edge devices. The aim of this Roadmap is to present a snapshot of the present state of neuromorphic technology and provide an opinion on the challenges and opportunities that the future holds in the major areas of neuromorphic technology, namely materials, devices, neuromorphic circuits, neuromorphic algorithms, applications, and ethics. The Roadmap is a collection of perspectives where leading researchers in the neuromorphic community provide their own view about the current state and the future challenges. We hope that this Roadmap will be a useful resource to readers outside this field, for those who are just entering the field, and for those who are well established in the neuromorphic community. https://doi.org/10.1088/2634-4386/ac4a83

cs.ET↗

arXiv2021

Experimental Body-input Three-stage DC offset Calibration Scheme for Memristive Crossbar

Reading several ReRAMs simultaneously in a neuromorphic circuit increases power consumption and limits scalability. Applying small inference read pulses is a vain attempt when offset voltages of the read-out circuit are decisively more. This paper presents an experimental validation of a three-stage calibration scheme to calibrate the DC offset voltage across the rows of the memristive crossbar. The proposed method is based on biasing the body terminal of one of the differential pair MOSFETs of the buffer through a series of cascaded resistor banks arranged in three stages: coarse, fine and finer stages. The circuit is designed in a 130 nm CMOS technology, where the OxRAM-based binary memristors are built on top of it. A dedicated PCB and other auxiliary boards have been designed for testing the chip. Experimental results validate the presented approach, which is only limited by mismatch and electrical noise.

cs.ET↗