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arXiv · 2404.15762

Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon

Radha Krishnan·Beng Yee Gan·Yu-Ling Hsueh·A. M. Saffat-Ee Huq·Jonathan Kenny·Rajib Rahman·Teck Seng Koh·Michelle Y. Simmons·Bent Weber
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Abstract

While traditionally considered a deleterious effect in quantum dot spin qubits, the spin-orbit interaction is recently being revisited as it allows for rapid coherent control by on-chip AC electric fields. For electrons in bulk silicon, SOC is intrinsically weak, however, it can be enhanced at surfaces and interfaces, or through atomic placement. Here we show that the strength of the spin-orbit coupling can be locally enhanced by more than two orders of magnitude in the manybody wave functions of multi-donor quantum dots compared to a single donor, reaching strengths so far only reported for holes or two-donor system with certain symmetry. Our findings may provide a pathway towards all-electrical control of donor-bound spins in silicon using electric dipole spin resonance (EDSR).

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Radha Krishnan, Beng Yee Gan, Yu-Ling Hsueh, A. M. Saffat-Ee Huq, Jonathan Kenny, Rajib Rahman, Teck Seng Koh, Michelle Y. Simmons, Bent Weber. 2024-04-24. Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon. https://doi.org/10.1002/adma.202405916

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