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arXiv · 2407.05951

Purcell enhancement and spin spectroscopy of silicon vacancy centers in silicon carbide using an ultra-small mode-volume plasmonic cavity

Jae-Pil So·Jialun Luo·Jaehong Choi·Brendan McCullian·Gregory D. Fuchs
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Abstract

Silicon vacancy (V$_{Si}$) centers in 4H-silicon carbide have emerged as a strong candidate for quantum networking applications due to their robust electronic and optical properties including a long spin coherence lifetime and bright, stable emission. Here, we report the integration of V$_{Si}$ centers with a plasmonic nanocavity to Purcell enhance the emission, which is critical for scalable quantum networking. Employing a simple fabrication process, we demonstrate plasmonic cavities that support a nanoscale mode volume and exhibit an increase in the spontaneous emission rate with a measured Purcell factor of up to 48. In addition to investigating the optical resonance modes, we demonstrate that an improvement in the optical stability of the spin-preserving resonant optical transitions relative to the radiation-limited value. The results highlight the potential of nanophotonic structures for advancing quantum networking technologies and emphasizes the importance of optimizing emitter-cavity interactions for efficient quantum photonic applications.

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Jae-Pil So, Jialun Luo, Jaehong Choi, Brendan McCullian, Gregory D. Fuchs. 2024-07-08. Purcell enhancement and spin spectroscopy of silicon vacancy centers in silicon carbide using an ultra-small mode-volume plasmonic cavity. https://arxiv.org/abs/2407.05951

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