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arXiv · 2408.04139

Nanocomposites of ferrocenyl-modified gold clusters and semiconducting polymers that integrate field-effect transistor and flash memory in a single neuromorphic device

Deepa Singh·Praveen N. Gunawardene·Mark S. Workentin·Giovanni Fanchini
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Abstract

We demonstrate that electroactive thin films incorporating semiconducting polymers and deterministic functionalized gold nanoclusters (ncAu25) lead to integration of the functions of resistive memory device and field-effect transistor (FETs) within a single component (mem-transistor) in a neuromorphic system. Memristor functions originate from ferrocenyl-modified gold nanoclusters (ncAu25-Fc) embedded in polymethyl-methacrylate (PMMA) and devices optimized for maximum 1/0 'flash' memory effect are found to contain 15 wt% ncAu25-Fc. Integrated memristor and neuromorphic functions are obtained by replacing PMMA with poly(3-hexylthiophene) (P3HT) in the active layer, from which transistor effects are derived. Based on the energy band diagrams of ncAu25, PMMA and P3HT, percolation theory is used to explain the memristor 1/0 on/off ratio as a function of ncAu25-Fc concentration. The use of ncAu25-Fc with charge-tunable, ferrocene-modified, ligands is critical toward better cluster-polymer interfaces. Our work shows that nanostructures of polymers and metalorganic frameworks bear strong potential towards neuromorphic devices and the circuital simplification of data storage technology.

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Deepa Singh, Praveen N. Gunawardene, Mark S. Workentin, Giovanni Fanchini. 2024-08-08. Nanocomposites of ferrocenyl-modified gold clusters and semiconducting polymers that integrate field-effect transistor and flash memory in a single neuromorphic device. https://doi.org/10.1063/5.0219013

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