arXiv subjects

Deepa Singh

Publications and source records attributed to Deepa Singh.

3 recordsLinked to original sources

arXiv2024

Nanocomposites of ferrocenyl-modified gold clusters and semiconducting polymers that integrate field-effect transistor and flash memory in a single neuromorphic device

We demonstrate that electroactive thin films incorporating semiconducting polymers and deterministic functionalized gold nanoclusters (ncAu25) lead to integration of the functions of resistive memory device and field-effect transistor (FETs) within a single component (mem-transistor) in a neuromorphic system. Memristor functions originate from ferrocenyl-modified gold nanoclusters (ncAu25-Fc) embedded in polymethyl-methacrylate (PMMA) and devices optimized for maximum 1/0 'flash' memory effect are found to contain 15 wt% ncAu25-Fc. Integrated memristor and neuromorphic functions are obtained by replacing PMMA with poly(3-hexylthiophene) (P3HT) in the active layer, from which transistor effects are derived. Based on the energy band diagrams of ncAu25, PMMA and P3HT, percolation theory is used to explain the memristor 1/0 on/off ratio as a function of ncAu25-Fc concentration. The use of ncAu25-Fc with charge-tunable, ferrocene-modified, ligands is critical toward better cluster-polymer interfaces. Our work shows that nanostructures of polymers and metalorganic frameworks bear strong potential towards neuromorphic devices and the circuital simplification of data storage technology.

cond-mat.mes-hall↗

arXiv2022

Grounding Explainability Within the Context of Global South in XAI

In this position paper, we propose building a broader and deeper understanding around Explainability in AI by 'grounding' it in social contexts, the socio-technical systems operate in. We situate our understanding of grounded explainability in the 'Global South' in general and India in particular and express the need for more research within the global south context when it comes to explainability and AI.

cs.HC↗

arXiv2019

Transparent and flexible field-effect transistors and mem-transistors with electroactive layers of solution-processed organic polyradicals

Solution processed polymers are at the core of organic electronics. Polyradicals (polymers in which each repeating unit contains an unpaired spin) are unique alternatives to their p-conjugated, semiconducting counterparts. Unique of polyradicals are tunable charge states localized at their repeating units, which enable electrically switchable charge transport regimes. Tremendous efforts were focused on polyradical memristors and batteries. Notwithstanding recent progress in doping, polyradical field-effect transistors (PR-FETs) have not been reported. Here, we show that vertical architectures, with drain-source contacts sandwiching the active layer of a strongly correlated 6-oxoverdazyl polyradical, leads to on/off ratios higher than 10+3 in p-type PR-FETs. Hole injection occurs via contact doping by tunable charge states at the polyradical-electrode interface. Transparent and flexible PR-FETs are also reported. PR-FETs are superior to existing organic FETs as they combine memristor and transistor functions in one mem-transistor device, offering a unique potential for the circuital simplification of organic electronics.

physics.app-ph↗