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arXiv · 2408.10696

Impact of ALD-Deposited Ultrathin Nitride Layers on Carrier Lifetimes and Photoluminescence Efficiency in CdTe/MgCdTe Double Heterostructures

Haris Naeem Abbasi·Xin Qi·Zheng Ju·Zhenqiang Ma·Yong-Hang Zhang
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Abstract

This work evaluates the passivation effectiveness of ultrathin nitride layers (SiNx, AlN, TiN) deposited via atomic layer deposition on CdTe/MgCdTe double heterostructures for solar cell applications. Time-resolved photoluminescence and photoluminescence measurements revealed enhanced carrier lifetimes and reduced surface recombination, indicating improved passivation effectiveness. These results underscore the potential of SiNx as a promising passivation material to improve the efficiency of CdTe solar cells.

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Haris Naeem Abbasi, Xin Qi, Zheng Ju, Zhenqiang Ma, Yong-Hang Zhang. 2024-08-20. Impact of ALD-Deposited Ultrathin Nitride Layers on Carrier Lifetimes and Photoluminescence Efficiency in CdTe/MgCdTe Double Heterostructures. https://arxiv.org/abs/2408.10696

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