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arXiv · 2408.12504

All-Electrical Layer-Spintronics in Altermagnetic Bilayer

Rui Peng·Jin Yang·Lin Hu·Wee-Liat Ong·Pin Ho·Chit Siong Lau·Junwei Liu·Yee Sin Ang
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Abstract

Electrical manipulation of spin-polarized current is highly desirable yet tremendously challenging in developing ultracompact spintronic device technology. Here we propose a scheme to realize the all-electrical manipulation of spin-polarized current in an altermagnetic bilayer. Such a bilayer system can host layer-spin locking, in which one layer hosts a spin-polarized current while the other layer hosts a current with opposite spin polarization. An out-of-plane electric field breaks the layer degeneracy, leading to a gate-tunable spin-polarized current whose polarization can be fully reversed upon flipping the polarity of the electric field. Using first-principles calculations, we show that CrS bilayer with C-type antiferromagnetic exchange interaction exhibits a hidden layer-spin locking mechanism that enables the spin polarization of the transport current to be electrically manipulated via the layer degree of freedom. We demonstrate that sign-reversible spin polarization as high as 87% can be achieved at room temperature. This work presents the pioneering concept of layer-spintronics which synergizes altermagnetism and bilayer stacking to achieve efficient electrical control of spin.

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Rui Peng, Jin Yang, Lin Hu, Wee-Liat Ong, Pin Ho, Chit Siong Lau, Junwei Liu, Yee Sin Ang. 2024-08-22. All-Electrical Layer-Spintronics in Altermagnetic Bilayer. https://arxiv.org/abs/2408.12504

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