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arXiv · 2409.03589

Simplified EPFL GaN HEMT Model

Farzan Jazaeri·Majid Shalchian·Ashkhen Yesayan·Amin Rassekh·Anurag Mangla·Bertrand Parvais·Jean-Michel Sallese
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Abstract

This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current characteristic (Gm/ID ). Relying on these figures, insights into GaN HEMT modeling in relation to technology offers a comprehensive understanding of the device behavior. Validation is achieved through measured transfer characteristics of GaN HEMTs fabricated at IMEC on a broad range of biases. This simplified approach should enable a simple and effective circuit design methodology with AlGaN/GaN HEMT heterostructures.

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Farzan Jazaeri, Majid Shalchian, Ashkhen Yesayan, Amin Rassekh, Anurag Mangla, Bertrand Parvais, Jean-Michel Sallese. 2024-09-05. Simplified EPFL GaN HEMT Model. https://arxiv.org/abs/2409.03589

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