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arXiv · 2409.13526

Steering of Sub-GeV positrons by ultra-thin bent Silicon crystal for ultra slow extraction applications

M. Garattini·D. Annucci·P. Gianotti·A. Liedl·E. Long·M. Mancini·T. Napolitano·M. Raggi·P. Valente
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Abstract

For the first time at the Beam Test Facility of the DA{\Phi}NE accelerator complex at the Laboratori Nazionali di Frascati of INFN, 450 MeV positrons have been deflected with high efficiency, using the Planar Channeling process in a bent silicon crystal. The deflection angle obtained is beyond 1 mrad. This interesting result finds several applications for manipulation of this kind of beams, in particular for slow extraction from leptons circular accelerators like DA{\Phi}NE. In this work the experimental apparatus, the measurement procedure and the experimental results are reported.

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M. Garattini, D. Annucci, P. Gianotti, A. Liedl, E. Long, M. Mancini, T. Napolitano, M. Raggi, P. Valente. 2024-09-20. Steering of Sub-GeV positrons by ultra-thin bent Silicon crystal for ultra slow extraction applications. https://arxiv.org/abs/2409.13526

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