SearcharxivSearch

arXiv · 2409.16454

Pulse Shaping Strategies for Efficient Switching of Magnetic Tunnel Junctions by Spin-Orbit Torque

Abstract

The writing energy for reversing the magnetization of the free layer in a magnetic tunnel junction (MTJ) is a key figure of merit for comparing the performances of magnetic random access memories with competing technologies. Magnetization switching of MTJs induced by spin torques typically relies on square voltage pulses. Here, we focus on the switching of perpendicular MTJs driven by spin-orbit torque (SOT), for which the magnetization reversal process consists of sequential domain nucleation and domain wall propagation. By performing a systematic study of the switching efficiency and speed as a function of pulse shape, we show that shaped pulses achieve up to 50% reduction of writing energy compared to square pulses without compromising the switching probability and speed. Time-resolved measurements of the tunneling magnetoresistance reveal how the switching times are strongly impacted by the pulse shape and temperature rise during the pulse. The optimal pulse shape consists of a preheating phase, a maximum amplitude to induce domain nucleation, and a lower amplitude phase to complete the reversal. Our experimental results, corroborated by micromagnetic simulations, provide diverse options to reduce the energy footprint of SOT devices in magnetic memory applications.

Explore related subjects

Keep this discovery

BibTeXRIS

Marco Hoffmann, Viola Krizakova, Vaishnavi Kateel, Kaiming Cai, Sebastien Couet, Pietro Gambardella. 2024-09-24. Pulse Shaping Strategies for Efficient Switching of Magnetic Tunnel Junctions by Spin-Orbit Torque. https://doi.org/10.1103/physrevapplied.22.034052

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Janus Dipoles: Fundamentals, Realizations, and Emerging Applications

The Janus dipole - featuring orthogonally oriented electric and magnetic dipoles with a 90-degree phase difference - has emerged as a powerful paradigm for wave manipulation. Unlike traditional Huygens dipoles used for directional control, this unique configuration exhibits strongly asymmetric, face-selective near-field behavior while maintaining a quasi-isotropic far-field radiation pattern. These remarkable properties make the Janus dipole an essential platform for directional wave shaping, with wide-ranging applications in on-chip photonics, quantum interactions, and wireless power transfer. This review systematically traces the rapid development of the Janus dipole from its foundational theoretical inception to its diverse implementation platforms across optical, microwave, and acoustic frequencies. In this paper, we explore the governing principles, classify realization strategies into passive Janus dipoles, active Janus dipoles, and advanced near-field coupling control, and highlight emerging frontiers. By bridging foundational electrodynamics with advanced device engineering, this paper serves as an essential reference and roadmap for researchers designing next-generation, highly integrated, and compact wave-manipulation systems.

physics.app-ph

Scattering-robust Imaging of Azimuthal Features with Enhanced Resolution

Imaging through scattering media remains a long-standing challenge in numerous real-world applications, ranging from medical imaging to long-distance sensing. Recently, illumination consisting of a single orbital angular momentum (OAM) mode, which is structured in the azimuthal coordinate, has been shown to provide enhanced resolution for imaging objects with azimuthal features, with the resolution becoming maximum at an optimal OAM value. However, in the presence of scattering, single-mode fields, which are spatially fully coherent, cause the imaging resolution to decrease significantly due to speckle formation. In this work, we employ azimuthally partially coherent fields and experimentally demonstrate imaging of azimuthal features with enhanced resolution in the presence of scattering. We show that lower degree of azimuthal coherence in such illumination leads to increased robustness against scattering while the azimuthal structure of the illumination ensures enhanced resolution. We derive the condition for best imaging resolution, and we report increase of imaging contrast in scattering from about 7% to 50% as the illumination is changed from a single-mode fully coherent field to that of an azimuthal partially coherent field.

physics.app-ph

Influence of magnetic fields on the performance of spin-orbit torque magnetic random-access memory

Spin-orbit torque magnetic random-access memory (SOT-MRAM) offers high speed, ultrahigh endurance, and compatibility with advanced semiconductor processes, making it a promising candidate for next-generation nonvolatile memory. However, intrinsic bias fields in magnetic tunnel junctions (MTJs), originating from reference-layer stray fields and interlayer coupling, cause asymmetric critical switching currents and increased energy consumption. Existing compensation approaches usually introduce additional magnetic layers into the MTJ stack, which increases fabrication complexity and limits wafer-scale integration. Here, we propose a bias-compensation strategy without modifying the MTJ stack by engineering local stray magnetic fields through magnetic filling materials in vertical interconnect access (VIA) channels during the back-end-of-line process. Micromagnetic simulations show that the proposed magnetic filling layer can provide the required auxiliary field for deterministic switching and significantly suppress write-current asymmetry. By optimizing the MTJ position relative to the magnetic filling structure, the write-current bias ratio is reduced from 21.6% in the conventional design to 1.3%. The approach is also applicable to in-plane magnetic anisotropy SOT-MTJs, reducing the bias ratio from 19.8% to -0.2%. Scaling analysis further demonstrates that the compensation effect remains effective when the device size is reduced to 20% of the original dimension (MTJ diameter approximately 10 nm), indicating its potential for high-density SOT-MRAM integration.

physics.app-ph