arXiv subjects

Kaiming Cai

Publications and source records attributed to Kaiming Cai.

At least 19 recordsLinked to original sources

arXiv2026

Influence of magnetic fields on the performance of spin-orbit torque magnetic random-access memory

Spin-orbit torque magnetic random-access memory (SOT-MRAM) offers high speed, ultrahigh endurance, and compatibility with advanced semiconductor processes, making it a promising candidate for next-generation nonvolatile memory. However, intrinsic bias fields in magnetic tunnel junctions (MTJs), originating from reference-layer stray fields and interlayer coupling, cause asymmetric critical switching currents and increased energy consumption. Existing compensation approaches usually introduce additional magnetic layers into the MTJ stack, which increases fabrication complexity and limits wafer-scale integration. Here, we propose a bias-compensation strategy without modifying the MTJ stack by engineering local stray magnetic fields through magnetic filling materials in vertical interconnect access (VIA) channels during the back-end-of-line process. Micromagnetic simulations show that the proposed magnetic filling layer can provide the required auxiliary field for deterministic switching and significantly suppress write-current asymmetry. By optimizing the MTJ position relative to the magnetic filling structure, the write-current bias ratio is reduced from 21.6% in the conventional design to 1.3%. The approach is also applicable to in-plane magnetic anisotropy SOT-MTJs, reducing the bias ratio from 19.8% to -0.2%. Scaling analysis further demonstrates that the compensation effect remains effective when the device size is reduced to 20% of the original dimension (MTJ diameter approximately 10 nm), indicating its potential for high-density SOT-MRAM integration.

physics.app-ph↗

arXiv2026

High-Efficiency Ising Machine with Time-Dimensional Exchange Coupling

Conventional probabilistic Ising machines often suffer from inefficient exploration of configuration space, while replica-based quantum Monte Carlo methods reduce sampling bottlenecks at the cost of large hardware overhead. Here we propose a time-dimensional exchange coupling (TEC) that replaces spatial replica coupling with a temporal exchange interaction between successive spin configurations of a single p-bit network. This TEC improves sampling efficiency without duplicating replica hardware. At low temperatures, antiferromagnetic TEC expands sampling range; at high temperatures, ferromagnetic TEC stabilizes the optimal state. For MaxCut problems with up to 2000 vertices, TEC significantly accelerates convergence speed. SPICE simulations confirm hardware feasibility. TEC offers a scalable, hardware-efficient strategy to enhance combinatorial optimization on existing Ising machines.

cond-mat.stat-mech↗

arXiv2026

Current-Driven Magnetization Switching via Zhang-Li Torque

Current-driven magnetization switching is currently governed by two established mechanisms: the Slonczewski spin-transfer torque (STT) and the spin-orbit torque (SOT). Here we identify the Zhang-Li STT as a third mechanism that operates on a different physical footing. Using micromagnetic simulations, we show that the interfacial Dzyaloshinskii-Moriya interaction (iDMI) inevitably creates spatial magnetization gradients at device edges, enabling the Zhang-Li torque to drive deterministic, field-assisted switching that fully reproduces all hallmark behaviors of SOT, including polarity control and effective-field characteristics. Our work establishes the Zhang-Li torque as an autonomous switching pathway, redefining the physical picture of current-induced magnetization reversal and providing new design principles for spintronic devices.

cond-mat.mes-hall↗

arXiv2026

Orbital Hall Effect Enables Field-Free Magnetization Reversal in Ferrimagnets without Additional Conversion Layer

The spin Hall effect provides a well-established route for electrical magnetization control, while the orbital Hall effect offers a powerful yet less explored source of angular momentum. Achieving field-free deterministic switching in straightforward orbital-torque architectures remains challenging. Here, we demonstrate orbital-Hall-current-driven switching in a Mo/CoGd bilayer without the need for a separate orbital-to-spin conversion layer across a wide temperature range. In this simplified geometry, Mo serves as both an orbital and spin current source. However, the spin contribution is insufficient due to weak spin-orbit coupling, which is consistent with first-principles calculations predicting a large orbital Hall conductivity. The adjacent ferrimagnetic CoGd layer provides both orbital-to-spin conversion and the perpendicular switching medium. Planar Hall and current-induced loop-shift measurements reveal a substantial unconventional z-polarized damping-like torque originating from interfacial symmetry breaking. Increasing the Mo thickness from 0.2 to 2 nm increases torque efficiency by approximately 31% (y-polarized) and 71% (z-polarized) components. This enhancement enables field-free deterministic switching with a critical current density down to 2.51 x 10^6 A cm^-2. Our results establish Mo/CoGd bilayers as a compact platform for orbital-current switching and point toward low-power orbitronic memory devices.

cond-mat.mtrl-sci↗

arXiv2026

Integrated magnonic neural circuits based on nonlinear wave neurons

Artificial intelligence is driving intense interest in alternative computing hardware capable of neural information processing beyond conventional charge-based electronics. Among emerging approaches, wave-based computing promises highly parallel and energy-efficient operation, but scalable physical neural hardware has remained elusive because wave systems generally lack cascadable nonlinear neurons with signal regeneration and phase-robust operation. Here we demonstrate integrated magnonic neural circuits based on nonlinear threshold neurons realized in nanoscale yttrium iron garnet waveguides. The neurons perform weighted summation of multiple spin-wave inputs, while a pump-controlled nonlinear activation defines continuously tunable firing thresholds. Owing to deeply nonlinear spin-wave dynamics, the activated neurons emit self-normalized outputs whose intensities are largely independent of the input amplitudes, while nonlinear phase self-adjustment suppresses sensitivity to the relative input phases, enabling deterministic neuron-to-neuron cascading without external signal restoration. We experimentally realize programmable threshold neurons, reconfigurable weighted classification and deterministic cascading between sequential neuronal stages, and further demonstrate reconfigurable physical pattern recognition in a seven-neuron integrated magnonic circuit through experimental classification of the binary letter patterns 'HUST'. These results establish nonlinear magnons as a scalable platform for integrated neural hardware and position nonlinear wave dynamics as a general paradigm for physical neuromorphic computing.

cond-mat.mtrl-sci↗

arXiv2026

Integrated magnonic chip using cascaded logic

The transistor transformed not only electronics but everyday life, and the integrated circuit - now simply the "chip" - made computation scalable and ubiquitous. Magnonics has long promised a parallel path to low-energy information processing by using spin waves instead of charge. Progress, however, has been limited by two fundamental obstacles: intrinsic attenuation of spin waves and the requirement for precisely normalised output intensity and input phase to ensure reliable logic operation - conditions that are difficult to maintain in large-scale circuits owing to inevitable imperfections. Here, we report an integrated magnonic circuit that overcomes both limitations through engineered nonlinearity in nanoscale yttrium iron garnet waveguides. Nonlinear self-adjustment of the spin wave phase renders logic operation insensitive to the relative phases of the inputs, while a deeply nonlinear, threshold-activated self-normalised excitation restores and standardises the output intensity. Using space-resolved micro-focused Brillouin light scattering, we demonstrate reconfigurable AND, OR and three-input majority gates and realise deterministic cascading across sequential stages, establishing a scalable on-chip logic primitive. The architecture operates with gigahertz frequencies, supports dynamic threshold control for functional reconfiguration, and is compatible with scalable integration, making it attractive for adaptive and neuromorphic computing. By resolving phase-independent operation and signal restoration at the level of device physics, this work advances magnonics from isolated proof-of-concept devices towards integrated magnonic chips that can complement advanced CMOS in energy-constrained computing tasks.

cond-mat.mtrl-sci↗

arXiv2025

Ultrafast and reliable domain-wall and skyrmion logic in a chirally coupled ferrimagnet

Unlocking the spin degree of freedom in addition to the electron's charge, spin-based logic offers an in-memory computing architecture beyond-CMOS technology. Here, we encode information into chiral spin textures (e.g., chiral domain-wall and skyrmion) and achieve an ultrafast and reliable all-electrical logic by exploiting the Dzyaloshinskii-Moriya interaction-induced chiral coupling. Taking advantage of fast spin dynamics in antiferromagnetically coupled systems, we achieved a fast domain-wall motion passing through the logic gate, exceeding 1 kilometre per second, yielding an operation time of 50 picoseconds for a 50 nanometres-long logic gate. Furthermore, we present a fast logic operation with skyrmion bubbles in a racetrack that exhibits a topologically protected computation scheme. Our work demonstrates a viable approach for advanced microchips with high operation frequency and ultralow power consumption, paving the way for next-generation computing technologies.

cond-mat.mes-hall↗

arXiv2025

Orbital Hall Effect Enables Field-Free Magnetization Reversal in Ferrimagnets without Additional Conversion Layer

The spin Hall effect (SHE) enables efficient electrical manipulation of magnetization through the spin Hall current \left(\mathbit{J}_{\mathbit{SHE}}\right), advancing energy-efficient spintronics. In parallel, the orbital Hall effect (OHE) offers an alternative pathway to SHE for converting charge current into an angular momentum flow. In this study, we demonstrate field-free current-induced perpendicular ferrimagnetic deterministic switching within a Mo/CoGd device without an additional orbital-to-spin conversion layer. This is achieved by harnessing localized orbital Hall currents \left(\mathbit{J}_{\mathbit{OHE}}\right) generated in the Mo layer. The in-plane symmetry breaking at the Mo/CoGd surface-interface layer, validated by a pronounced planar Hall effect, gives rise to a substantial unconventional z-polarized damping-like torque. The CoGd serves a dual role: not only as a converter that transforms the significant \mathbit{J}_{\mathbit{OHE}} into \mathbit{J}_{\mathbit{SHE}} but also as a ferrimagnetic self-switching mechanism. This dual functionality enables highly efficient field-free current-induced magnetization switching with a critical current density as low as \mathbf{2}.\mathbf{51}\ \times{\mathbf{10}}^\mathbf{6} A cm-2. Our work highlights the potential of orbital Hall currents for energy-efficient magnetization switching, making a notable contribution to the burgeoning field of orbitronics.

cond-mat.mtrl-sci↗

arXiv2024

Pulse Shaping Strategies for Efficient Switching of Magnetic Tunnel Junctions by Spin-Orbit Torque

The writing energy for reversing the magnetization of the free layer in a magnetic tunnel junction (MTJ) is a key figure of merit for comparing the performances of magnetic random access memories with competing technologies. Magnetization switching of MTJs induced by spin torques typically relies on square voltage pulses. Here, we focus on the switching of perpendicular MTJs driven by spin-orbit torque (SOT), for which the magnetization reversal process consists of sequential domain nucleation and domain wall propagation. By performing a systematic study of the switching efficiency and speed as a function of pulse shape, we show that shaped pulses achieve up to 50% reduction of writing energy compared to square pulses without compromising the switching probability and speed. Time-resolved measurements of the tunneling magnetoresistance reveal how the switching times are strongly impacted by the pulse shape and temperature rise during the pulse. The optimal pulse shape consists of a preheating phase, a maximum amplitude to induce domain nucleation, and a lower amplitude phase to complete the reversal. Our experimental results, corroborated by micromagnetic simulations, provide diverse options to reduce the energy footprint of SOT devices in magnetic memory applications.

physics.app-ph↗

arXiv2024

Improved Long-Term Prediction of Chaos Using Reservoir Computing Based on Stochastic Spin-Orbit Torque Devices

Predicting chaotic systems is crucial for understanding complex behaviors, yet challenging due to their sensitivity to initial conditions and inherent unpredictability. Probabilistic Reservoir Computing (RC) is well-suited for long-term chaotic predictions by handling complex dynamic systems. Spin-Orbit Torque (SOT) devices in spintronics, with their nonlinear and probabilistic operations, can enhance performance in these tasks. This study proposes an RC system utilizing SOT devices for predicting chaotic dynamics. By simulating the reservoir in an RC network with SOT devices that achieve nonlinear resistance changes with random distribution, we enhance the robustness for the predictive capability of the model. The RC network predicted the behaviors of the Mackey-Glass and Lorenz chaotic systems, demonstrating that stochastic SOT devices significantly improve long-term prediction accuracy.

cond-mat.mtrl-sci↗

arXiv2023

Energy-efficient superparamagnetic Ising machine and its application to traveling salesman problems

The growth of artificial intelligence and IoT has created a significant computational load for solving non-deterministic polynomial-time (NP)-hard problems, which are difficult to solve using conventional computers. The Ising computer, based on the Ising model and annealing process, has been highly sought for finding approximate solutions to NP-hard problems by observing the convergence of dynamic spin states. However, it faces several challenges, including high power consumption due to artificial spins and randomness emulated by complex circuits, as well as low scalability caused by the rapidly growing connectivity when considering large-scale problems. Here, we present an experimental Ising annealing computer based on superparamagnetic tunnel junctions (SMTJs) with all-to-all connections, which successfully solves a 70-city travelling salesman problem (4761-node Ising problem). By taking advantage of the intrinsic randomness of SMTJs, implementing a proper global annealing scheme, and using an efficient algorithm, our SMTJ-based Ising annealer shows superior performance in terms of power consumption and energy efficiency compared to other Ising schemes. Additionally, our approach provides a promising way to solve complex problems with limited hardware resources. Moreover, we propose a crossbar array architecture for scalable integration using conventional magnetic random access memories. Our results demonstrate that the SMTJ-based Ising annealing computer with high energy efficiency, speed, and scalability is a strong candidate for future unconventional computing schemes.

cs.ET↗

arXiv2023

Field-Free Spin-Orbit Torque driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current

Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memory computing, and logic applications. However, the requirement of the external magnetic field to achieve deterministic switching in perpendicular magnetized SOT-MTJs limits its implementation for practical applications. Here, we introduce a field-free switching (FFS) solution for the SOT-MTJ device by shaping the SOT channel to create a "bend" in the SOT current. The resulting bend in the charge current creates a spatially non-uniform spin current, which translates into inhomogeneous SOT on an adjacent magnetic free layer enabling deterministic switching. We demonstrate FFS experimentally on scaled SOT-MTJs at nanosecond time scales. This proposed scheme is scalable, material-agnostic, and readily compatible with wafer-scale manufacturing, thus creating a pathway for developing purely current-driven SOT systems.

cond-mat.mes-hall↗

arXiv2020

Spin-orbit torque magnetization switching in MoTe2/permalloy heterostructures

The ability to switch magnetic elements by spin-orbit-induced torques has recently attracted much attention for a path towards high-performance, non-volatile memories with low power consumption. Realizing efficient spin-orbit-based switching requires harnessing both new materials and novel physics to obtain high charge-to-spin conversion efficiencies, thus making the choice of spin source crucial. Here we report the observation of spin-orbit torque switching in bilayers consisting of a semimetallic film of 1T'-MoTe2 adjacent to permalloy. Deterministic switching is achieved without external magnetic fields at room temperature, and the switching occurs with currents one order of magnitude smaller than those typical in devices using the best-performing heavy metals. The thickness dependence can be understood if the interfacial spin-orbit contribution is considered in addition to the bulk spin Hall effect. Further threefold reduction in the switching current is demonstrated with resort to dumbbell-shaped magnetic elements. These findings foretell exciting prospects of using MoTe2 for low-power semimetal material based spin devices.

cond-mat.mtrl-sci↗

arXiv2020

Electrical generation and detection of terahertz signal based on spin-wave emission from ferrimagnets

Terahertz (THz) signals, mainly generated by photonic or electronic approaches, are being sought for various applications, whereas the development of magnetic source might be a necessary step to harness the magnetic nature of electromagnetic radiation. We show that the relativistic effect on the current-driven domain-wall motion induces THz spin-wave emission in ferrimagnets. The required current density increases dramatically in materials with strong exchange interaction and rapidly exceeds 1012 A m-2, leading to the device breakdown and thus the lack of experimental evidence. By translating the collective magnetization oscillations into voltage signals, we propose a three-terminal device for the electrical detection of THz spin wave. Through material engineering, wide frequency range from 264 GHz to 1.1 THz and uniform continuous signals with improved output power can be obtained. As a reverse effect, the spin wave generated in this system is able to move ferrimagnetic domain wall. Our work provides guidelines for the experimental verification of THz spin wave, and could stimulate the design of THz spintronic oscillators for wideband applications as well as the all-magnon spintronic devices.

cond-mat.mes-hall↗

arXiv2019

Spin Logic Devices via Electric Field Controlled Magnetization Reversal by Spin-Orbit Torque

We describe a spin logic device with controllable magnetization switching of perpendicularly magnetized ferromagnet / heavy metal structures on a ferroelectric (1-x)[Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] (PMN-PT) substrate using current-induced spin-orbit torque. The devices were operated without an external magnetic field and controlled by voltages as low as 10 V applied across the PMN-PT substrate, which is much lower compared to previous reports (500 V). The deterministic switching with smaller voltage was realized from the virgin state of the PMN-PT. Ferroelectric simulation shows the unsaturated minor loop exhibits obvious asymmetries in the polarizations. Larger polarization can be induced from the initial ferroelectric state, while it is difficult for opposite polarization. The XNOR, AND, NAND and NOT logic functions were demonstrated by the deterministic magnetization switching from the interaction between the spin-orbit torque and electric field at the PMN-PT/Pt interface. The nonvolatile spin logic scheme in this work is simple, scalable, programmable, which are favorable in the logic-in-memory design with low energy consumption.

physics.app-ph↗

arXiv2019

Nonlinear magnetotransport shaped by Fermi surface topology and convexity in WTe2

The nature of Fermi surface defines the physical properties of conductors and many physical phenomena can be traced to its shape. Although the recent discovery of a current-dependent nonlinear magnetoresistance in spin-polarized non-magnetic materials has attracted considerable attention in spintronics, correlations between this phenomenon and the underlying fermiology remain unexplored. Here, we report the observation of nonlinear magnetoresistance at room temperature in a semimetal WTe2, with an interesting temperature-driven inversion. Theoretical calculations reproduce the nonlinear transport measurements and allow us to attribute the inversion to temperature-induced changes in Fermi surface convexity. We also report a large anisotropy of nonlinear magnetoresistance in WTe2, due to its low symmetry of Fermi surfaces. The good agreement between experiments and theoretical modeling reveals the critical role of Fermi surface topology and convexity on the nonlinear magneto-response. These results lay a new path to explore ramifications of distinct fermiology for nonlinear transport in condensed-matter.

cond-mat.mtrl-sci↗

arXiv2018

Recent advances in spin-orbit torques: Moving towards device applications

The ability of spintronic devices to utilize an electric current for manipulating the magnetization has resulted in large-scale developments, such as, magnetic random access memories and boosted the spintronic research area. In this regard, over the last decade, magnetization manipulation using spin-orbit torque has been devoted a lot of research attention as it shows a great promise for future ultrafast and power efficient magnetic memories. In this review, we summarize the latest advancements in spin-orbit torque research and highlight some of the technical challenges for practical spin-orbit torque devices. We will first introduce the basic concepts and highlight the latest material choices for spin-orbit torque devices. Then, we will summarize the important advancements in the study of magnetization switching dynamics using spin-orbit torque, which are important from scientific as well as technological aspect. The final major section focuses on the concept of external assist field free spin-orbit torque switching which is a requirement for practical spin-orbit torque devices.

cond-mat.mes-hall↗

arXiv2018

Field-free spin-orbit torque switching from geometrical domain wall pinning

Spin-orbit torques, which utilize spin currents arising from the spin-orbit coupling, offer a novel method to electrically switch the magnetization with perpendicular anisotropy. However, the necessity of an external magnetic field to achieve a deterministic switching is an obstacle for realizing practical spin-orbit torque devices with all-electric operation. Here, we report a field-free spin-orbit torque switching by exploiting the domain wall motion in an anti-notched microwire with perpendicular anisotropy, which exhibits multi-domain states stabilized by the domain wall surface tension. The combination of spin-orbit torque, Dzyaloshinskii-Moriya interaction, and domain wall surface tension induced geometrical pinning allows a deterministic control of the domain wall and offers a novel method to achieve a field-free spin-orbit torque switching. Our work demonstrates the proof of concept of a perpendicular memory cell which can be readily adopted in a three-terminal magnetic memory.

cond-mat.mtrl-sci↗