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arXiv · 2410.04206

Growth of compositionally uniform $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with low relaxation degree on GaN by molecular beam epitaxy

Jingxuan Kang·Mikel Gómez Ruiz·Duc Van Dinh·Aidan F Campbell·Philipp John·Thomas Auzelle·Achim Trampert·Jonas Lähnemann·Oliver Brandt·Lutz Geelhaar
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Abstract

500-nm-thick $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with $x=$ 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a comprehensive analysis involving x-ray diffraction, secondary ion mass spectrometry, and cathodoluminescence as well as photoluminescence spectroscopy. We demonstrate low degrees of strain relaxation (10% for $x=0.12$), low threading dislocation densities ($\mathrm{1\times10^{9}\,cm^{-2}}$ for $x=0.12$), uniform composition both in the growth and lateral direction, and a narrow emission band. The unique sum of excellent materials properties make these layers an attractive basis for the top-down fabrication of ternary nanowires.

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Jingxuan Kang, Mikel Gómez Ruiz, Duc Van Dinh, Aidan F Campbell, Philipp John, Thomas Auzelle, Achim Trampert, Jonas Lähnemann, Oliver Brandt, Lutz Geelhaar. 2024-10-05. Growth of compositionally uniform $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with low relaxation degree on GaN by molecular beam epitaxy. https://arxiv.org/abs/2410.04206

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