Zero external magnetic field quantum standard of resistance at the 10-9 level

D. K. Patel; K. M. Fijalkowski; M. Kruskopf; N. Liu; M. Götz; E. Pesel; M. Jaime; M. Klement; S. Schreyeck; K. Brunner; C. Gould; L. W. Molenkamp; H. Scherer

doi:10.1038/s41928-024-01295-w

arXiv · 2410.13365

Zero external magnetic field quantum standard of resistance at the 10-9 level

D. K. Patel·K. M. Fijalkowski·M. Kruskopf·N. Liu·M. Götz·E. Pesel·M. Jaime·M. Klement·S. Schreyeck·K. Brunner·C. Gould·L. W. Molenkamp·H. Scherer

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Abstract

The quantum anomalous Hall effect holds promise as a disruptive innovation in condensed matter physics and metrology, as it gives access to Hall resistance quantization in terms of the von-Klitzing constant RK = h/e2 at zero external magnetic field. In this work, we study the accuracy of Hall resistance quantization in a device based on the magnetic topological insulator material (V,Bi,Sb)2Te3. We show that the relative deviation of the Hall resistance from RK at zero external magnetic field is (4.4 +/- 8.7) nohm/ohm when extrapolated to zero measurement current, and (8.6 +/- 6.7) nohm/ohm when extrapolated to zero longitudinal resistivity (each with combined standard uncertainty, k = 1), which sets a new benchmark for the quantization accuracy in topological matter. This precision and accuracy at the nohm/ohm level (or 10-9 of relative uncertainty) achieve the thresholds for relevant metrological applications and establish a zero external magnetic field quantum standard of resistance - an important step towards the integration of quantum-based voltage and resistance standards into a single universal quantum electrical reference.

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D. K. Patel, K. M. Fijalkowski, M. Kruskopf, N. Liu, M. Götz, E. Pesel, M. Jaime, M. Klement, S. Schreyeck, K. Brunner, C. Gould, L. W. Molenkamp, H. Scherer. 2024-10-17. Zero external magnetic field quantum standard of resistance at the 10-9 level. https://doi.org/10.1038/s41928-024-01295-w

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