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M. Klement

Publications and source records attributed to M. Klement.

2 recordsLinked to original sources

Unconventional incommensurate epitaxy of superconducting FeSe films on SrTiO$_3$

We present a combined X-ray diffraction and transmission electron microscopy study of superconducting FeSe/FeTe multilayers grown by molecular beam epitaxy on SrTiO$_3$(001) substrates. While X-ray diffraction confirms perfect in-plane epitaxial alignment between FeSe, FeTe, and the substrate, scanning transmission electron microscopy reveals a surprising lack of atomic registry at the FeSe/SrTiO$_3$ interface. Instead of adapting to the substrate lattice, FeSe retains its own in-plane lattice spacing. A periodic lateral shift between the atomic positions of FeSe and SrTiO$_3$ is observed, with a registry recurrence length that matches the lattice mismatch determined by X-ray diffraction. No misfit dislocations or other relaxation features are detected at the interface. This coexistence of directional alignment and registry-free growth suggests an unconventional regime of epitaxy in which crystallographic orientation is maintained without atomic matching. The findings offer insight into strain accommodation in layered systems and may have implications for interface engineering in Fe-based superconductors.

cond-mat.mes-hall

Zero external magnetic field quantum standard of resistance at the 10-9 level

The quantum anomalous Hall effect holds promise as a disruptive innovation in condensed matter physics and metrology, as it gives access to Hall resistance quantization in terms of the von-Klitzing constant RK = h/e2 at zero external magnetic field. In this work, we study the accuracy of Hall resistance quantization in a device based on the magnetic topological insulator material (V,Bi,Sb)2Te3. We show that the relative deviation of the Hall resistance from RK at zero external magnetic field is (4.4 +/- 8.7) nohm/ohm when extrapolated to zero measurement current, and (8.6 +/- 6.7) nohm/ohm when extrapolated to zero longitudinal resistivity (each with combined standard uncertainty, k = 1), which sets a new benchmark for the quantization accuracy in topological matter. This precision and accuracy at the nohm/ohm level (or 10-9 of relative uncertainty) achieve the thresholds for relevant metrological applications and establish a zero external magnetic field quantum standard of resistance - an important step towards the integration of quantum-based voltage and resistance standards into a single universal quantum electrical reference.

cond-mat.mes-hall