Searcharxiv⌕ Search
Home/Archive/arXiv

arXiv · 2410.22902

Polarization boost and ferroelectricity down to one unit cell in layered Carpy-Galy La$_{2}$Ti$_{2}$O$_{7}$ thin films

Elzbieta Gradauskaite·Anouk S. Goossens·Xiaoyan Li·Lucía Iglesias·Alexandre Gloter·Quintin N. Meier·Manuel Bibes
View original source ↗Read source document ↗Export metadata ↓

Abstract

Layered perovskite-based compounds offer a range of unconventional properties enabled by their naturally anisotropic structure. While most renowned for the superconductivity observed in the Ruddlesden-Popper phases, many of these layered compounds are also ferroelectric and exhibit a sizeable in-plane polarization. Among these, the Carpy-Galy phases (A${_n}$B${_n}$O$_{3n+2}$), characterized by 110-oriented perovskite planes interleaved with additional oxygen layers, have been debated as platforms for hosting not only a robust polarization but also multiferroicity and polar metallicity. However, the challenges associated with the synthesis of ultrathin Carpy-Galy films and understanding the impact of strain on their properties limit their integration into devices. Addressing this issue, our study focuses on La$_2$Ti$_2$O$_7$, an $n$=4 (A$_2$B$_2$O$_7$) representative of the Carpy-Galy family, exploring its growth and concurrent phase stability on various substrates under different strain conditions. Remarkably, we demonstrate that a 3% tensile strain from DyScO$_3$ (100) substrates promotes a controlled layer-by-layer growth mode, while SrTiO$_3$ (110) and LaAlO$_3$-Sr$_2$TaAlO$_6$ (110), that exert negligible and compressive strains respectively, require post-deposition annealing to achieve similar results. Using scanning probe microscopy, X-ray diffraction, scanning transmission electron microscopy, and polarization switching experiments, we confirm that these films possess exceptional ferroelectric properties, including a polarization of 18 $\mu$C/cm$^2$ - more than three times higher than previously reported - as well as persistence of ferroelectricity down to a single-unit-cell thickness. This study not only advances our understanding of Carpy-Galy phases in thin films but also lays a foundation for their application in advanced ferroelectric device architectures.

Explore related subjects

cond-mat.mtrl-scicond-mat.mes-hall

Keep this discovery

BibTeXRIS

Elzbieta Gradauskaite, Anouk S. Goossens, Xiaoyan Li, Lucía Iglesias, Alexandre Gloter, Quintin N. Meier, Manuel Bibes. 2024-10-30. Polarization boost and ferroelectricity down to one unit cell in layered Carpy-Galy La$_{2}$Ti$_{2}$O$_{7}$ thin films. https://doi.org/10.1002/adma.202416963

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci↗
arXiv2026

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci↗
arXiv2026

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci↗