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Lucía Iglesias

Publications and source records attributed to Lucía Iglesias.

4 recordsLinked to original sources

Achieving superconductivity in infinite-layer nickelate thin films by aluminum sputtering deposition

The recent discovery of superconductivity in infinite-layer (IL, ABO$_2$) nickelates has opened a new avenue to deepen the understanding of high-temperature superconductivity. However, progress in this field is slowed by significant challenges in material synthesis and the scarcity of research groups capable of producing high quality superconducting samples. IL nickelates are obtained from a reduction of the perovskite ABO$_3$ phase, typically achieved by annealing using CaH$_2$ as a reducing agent. Here, we present a new method to synthesize superconducting infinite-layer nickelate Pr$_{0.8}$Sr$_{0.2}$NiO$_2$ thin films using an aluminum overlayer deposited by sputtering as a reducing agent. We systematically optimized the aluminum deposition parameters and obtained superconducting samples reduced either in situ or ex situ (after air exposure of the precursor ABO$_3$ films). A comparison of their crystalline quality and transport properties shows that in situ Al reduction enhances the quality of the superconducting Pr$_{0.8}$Sr$_{0.2}$NiO$_2$ thin films, achieving a maximum superconducting transition temperature $T_{c}^{onset}$ of 17 K, in agreement with the optimum value reported for this compound. This simple synthesis route, much more accessible than existing methods, offers better control and reproducibility over the topotactic transformation, opening new opportunities to gain insights into the physics of superconductivity in nickelates.

cond-mat.supr-con↗

Polarization boost and ferroelectricity down to one unit cell in layered Carpy-Galy La$_{2}$Ti$_{2}$O$_{7}$ thin films

Layered perovskite-based compounds offer a range of unconventional properties enabled by their naturally anisotropic structure. While most renowned for the superconductivity observed in the Ruddlesden-Popper phases, many of these layered compounds are also ferroelectric and exhibit a sizeable in-plane polarization. Among these, the Carpy-Galy phases (A${_n}$B${_n}$O$_{3n+2}$), characterized by 110-oriented perovskite planes interleaved with additional oxygen layers, have been debated as platforms for hosting not only a robust polarization but also multiferroicity and polar metallicity. However, the challenges associated with the synthesis of ultrathin Carpy-Galy films and understanding the impact of strain on their properties limit their integration into devices. Addressing this issue, our study focuses on La$_2$Ti$_2$O$_7$, an $n$=4 (A$_2$B$_2$O$_7$) representative of the Carpy-Galy family, exploring its growth and concurrent phase stability on various substrates under different strain conditions. Remarkably, we demonstrate that a 3% tensile strain from DyScO$_3$ (100) substrates promotes a controlled layer-by-layer growth mode, while SrTiO$_3$ (110) and LaAlO$_3$-Sr$_2$TaAlO$_6$ (110), that exert negligible and compressive strains respectively, require post-deposition annealing to achieve similar results. Using scanning probe microscopy, X-ray diffraction, scanning transmission electron microscopy, and polarization switching experiments, we confirm that these films possess exceptional ferroelectric properties, including a polarization of 18 $μ$C/cm$^2$ - more than three times higher than previously reported - as well as persistence of ferroelectricity down to a single-unit-cell thickness. This study not only advances our understanding of Carpy-Galy phases in thin films but also lays a foundation for their application in advanced ferroelectric device architectures.

cond-mat.mtrl-sci↗

All-electrical detection of the spin-charge conversion in nanodevices based on SrTiO3 two-dimensional electron gases

The Magnetoelectric Spin-Orbit (MESO) technology aims to bring logic into memory by combining a ferromagnet with a magnetoelectric (ME) element for information writing, and a spin-orbit (SO) element for information read-out through spin-charge conversion. Among candidate SO materials to achieve a large MESO output signal, oxide Rashba two-dimensional electron gases (2DEGs) have shown very large spin-charge conversion efficiencies, albeit mostly in spin-pumping experiments. Here, we report all-electrical spin-injection and spin-charge conversion experiments in nanoscale devices harnessing the inverse Edelstein effect of SrTiO3 2DEGs. We have designed, patterned and fabricated nanodevices in which a spin current injected from a cobalt layer into the 2DEG is converted into a charge current. We optimized the spin-charge conversion signal by applying back-gate voltages, and studied its temperature evolution. We further disentangled the inverse Edelstein contribution from spurious effects such as the planar Hall effect, the anomalous Hall effect or the anisotropic magnetoresistance. The combination of non-volatility and high energy efficiency of these devices could potentially lead to new technology paradigms for beyond-CMOS computing architectures.

cond-mat.mes-hall↗

Tuning oxygen vacancy diffusion through strain in SrTiO$_3$ thin films

Understanding the diffusion of oxygen vacancies in oxides under different external stimuli is crucial for the design of ion-based electronic devices, improve catalytic performance, etc. In this manuscript, using an external electric field produced by an AFM tip, we obtain the room-temperature diffusion coefficient of oxygen-vacancies in thin-films of SrTiO$_3$ under compressive/tensile epitaxial strain. Tensile strain produces a substantial increase of the diffusion coefficient, facilitating the mobility of vacancies through the film. Additionally, the effect of tip bias, pulse time, and temperature on the local concentration of vacancies is investigated. These are important parameters of control in the production and stabilization of non-volatile states in ion-based memresistive devices. Our findings show the key role played by strain for the control of oxygen vacancy migration in thin-film oxides.

cond-mat.mtrl-sci↗