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arXiv · 2411.00603

The impact of morphological structure and flexo-chemical strains on the electric transport mechanisms in the molybdenum-disulfide-oxide nanoflakes

Oleksandr S. Pylypchuk·Victor V. Vainberg·Vladimir N. Poroshin·Anastasyia V. Terebilenko·Andrii S. Nikolenko·Vadym I. Popenko·Anatolyi S. Tolochko·Maryna V. Olenchuk·Oleksii Bezkrovnyi·Galina I. Dovbeshko·Tomash Sabov·Boris M. Romanyuk·Sergey V. Kolotilov·Anna N. Morozovska
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Abstract

Electric conduction mechanisms are studied in the pressed nanoflake powder of the molybdenum-disulfide-oxide (MoSxOy) depending on their content and structure. The MoSxOy nanoflakes were prepared by reaction of (NH4)6Mo7O24 with thiourea in aqueous solution followed by aerial oxidation. The sintered nanoflakes are 10-20 nm thick and self-assembled in the "nanoflower"-shape aggregates forming powder particles. The chemical composition and structure of the powders were studied by XPS, EDS and Raman spectroscopy, which show that the powders have different chemical composition and structure depending on the preparation conditions. These studies revealed the existence of different forms of MoS2 and its oxides in the powders. These features are impactful on electric transport properties. The current vs voltage (I-V) dependences of the pressed MoSxOy nanoflakes reveal hysteresis-like behavior; and their loop width depends on the chemical composition and structure. In the samples with the highest content of Mo in the oxide/sulfoxide form the negative differential conductivity has been observed. The I-V curves of all MoSxOy nanoflake samples manifest the three-state resistive switching and the long-lasting transient charge/discharge on switching "on/off" the voltage across the sample, which evidences the role of interface charges in their conductivity. To describe theoretically the observed I-V curves, polar and electric-transport properties of the pressed MoSxOy nanoflakes, the Landau-Cahn-Hilliard approach considering flexo-chemical field has been used. The revealed in experiment and explained theoretically features of resistive switching and charge accumulation look promising for applications in memristors and high-performance supercapacitors.

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Oleksandr S. Pylypchuk, Victor V. Vainberg, Vladimir N. Poroshin, Anastasyia V. Terebilenko, Andrii S. Nikolenko, Vadym I. Popenko, Anatolyi S. Tolochko, Maryna V. Olenchuk, Oleksii Bezkrovnyi, Galina I. Dovbeshko, Tomash Sabov, Boris M. Romanyuk, Sergey V. Kolotilov, Anna N. Morozovska. 2024-11-01. The impact of morphological structure and flexo-chemical strains on the electric transport mechanisms in the molybdenum-disulfide-oxide nanoflakes. https://arxiv.org/abs/2411.00603

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