arXiv subjects

Galina I. Dovbeshko

Publications and source records attributed to Galina I. Dovbeshko.

6 recordsLinked to original sources

arXiv2025

The impact of morphological structure and flexo-chemical strains on the electric transport mechanisms in the molybdenum-disulfide-oxide nanoflakes

Electric conduction mechanisms are studied in the pressed nanoflake powder of the molybdenum-disulfide-oxide (MoSxOy) depending on their content and structure. The MoSxOy nanoflakes were prepared by reaction of (NH4)6Mo7O24 with thiourea in aqueous solution followed by aerial oxidation. The sintered nanoflakes are 10-20 nm thick and self-assembled in the "nanoflower"-shape aggregates forming powder particles. The chemical composition and structure of the powders were studied by XPS, EDS and Raman spectroscopy, which show that the powders have different chemical composition and structure depending on the preparation conditions. These studies revealed the existence of different forms of MoS2 and its oxides in the powders. These features are impactful on electric transport properties. The current vs voltage (I-V) dependences of the pressed MoSxOy nanoflakes reveal hysteresis-like behavior; and their loop width depends on the chemical composition and structure. In the samples with the highest content of Mo in the oxide/sulfoxide form the negative differential conductivity has been observed. The I-V curves of all MoSxOy nanoflake samples manifest the three-state resistive switching and the long-lasting transient charge/discharge on switching "on/off" the voltage across the sample, which evidences the role of interface charges in their conductivity. To describe theoretically the observed I-V curves, polar and electric-transport properties of the pressed MoSxOy nanoflakes, the Landau-Cahn-Hilliard approach considering flexo-chemical field has been used. The revealed in experiment and explained theoretically features of resistive switching and charge accumulation look promising for applications in memristors and high-performance supercapacitors.

cond-mat.mtrl-sci↗

arXiv2022

Size Effect of Local Current-Voltage Characteristics of MX$_2$ Nanoflakes: Local Density of States Reconstruction from Scanning Tunneling Microscopy Experiments

Local current-voltage characteristics for low-dimensional transition metal dichalcogenides (LD-TMD), as well as the reconstruction of their local density of states (LDOS) from scanning tunneling microscopy (STM) experiments is of fundamental interest and can be useful for advanced applications. Most of existing models are either hardly applicable for the LD-TMD of complex shape (e.g., those based on Simmons approach), or necessary for solving an ill-defined integral equation to deconvolute the unknown LDOS (e.g., those based on Tersoff approach). Using a serial expansion of Tersoff formulae, we propose a flexible method how to reconstruct the LDOS from local current-voltage characteristics measured in STM experiments. We established a set of key physical parameters, which characterize the tunneling current of a STM probe - sample contact and the sample LDOS expanded in Gaussian functions. Using a direct variational method coupled with a probabilistic analysis, we determine these parameters from the STM experiments for MoS2 nanoflakes with different number of layers. The main result is the reconstruction of the LDOS in a relatively wide energy range around a Fermi level, which allows insight in the local band structure of LD-TMDs. The reconstructed LDOS reveals pronounced size effects for the single-layer, bi-layer and three-layer MoS$_2$ nanoflakes, which we relate with low dimensionality and strong bending/corrugation of the nanoflakes. We hope that the proposed elaboration of the Tersoff approach allowing LDOS reconstruction will be of urgent interest for quantitative description of STM experiments, as well as useful for the microscopic physical understanding of the surface, strain and bending contribution to LD-TMDs electronic properties.

cond-mat.mtrl-sci↗

arXiv2021

Flexoelectric and piezoelectric coupling in a bended MoS$_2$ monolayer

Low-dimensional (LD) transition metal dichalcogenides (TMDs) in the form of nanoflakes, which consist of one or several layers, are the subject of intensive fundamental and applied research. Due to the size-induced transition from a bulk to nanoscale, they can be both nonpolar, piezoelectric or even ferroelectric. Also, in terms of electronic properties, they can be direct-band semiconductors, semi-metals or even metals. The tuning of the electronic properties in the LD-TMDs are commonly related with applied strains and strain gradients, which can affect strongly their polar properties via the piezoelectric and flexoelectric couplings. Using the density functional theory (DFT) and phenomenological Landau approach, we studied the bended 2H-MoS$_2$ monolayer and analyzed its flexoelectric and piezoelectric properties. The dependences of the dipole moment, strain and strain gradient on the coordinate along the layer were calculated. From these dependences the components of the flexoelectric and piezoelectric tensors have been determined and analyzed. Obtained results are useful for applications of LD-TMDs in strain engineering and flexible electronics.

cond-mat.mtrl-sci↗

arXiv2020

Correlation between corrugation-induced flexoelectric polarization and conductivity of low-dimensional transition metal dichalcogenides

Tunability of polar and semiconducting properties of low-dimensional transition metal dichalcogenides (TMDs) have propelled them to the forefront of fundamental and applied physical research. These materials can vary from non-polar to ferroelectric, and from direct-band semiconductor to metallic. However, in addition to classical controls such as composition, doping, and field effect in TMDs the additional degrees of freedom emerge due to the curvature-induced electron redistribution and associated changes in electronic properties. Here we numerically explore the elastic and electric fields, flexoelectric polarization and free charge density for a TMD nanoflake placed on a rough substrate with a sinusoidal profile of the corrugation using finite element modelling. Numerical results for different flake thickness and corrugation depth yield insight into the flexoelectric nature of the out-of-plane electric polarization and establish the unambiguous correlation between the polarization and static conductivity modulation caused by inhomogeneous elastic strains coupled with deformation potential and strain gradients, which evolve in TMD nanoflake due to the adhesion between the flake surface and corrugated substrate. We revealed a pronounced maximum at the thickness dependences of the electron and hole conductivity of MoS2 and MoTe2 nanoflakes placed on a metallic substrate, which opens the way for their geometry optimization towards significant improvement their polar and electronic properties, necessary for their advanced applications in nanoelectronics and memory devices.Specifically, obtained results can be useful for elaboration of nanoscale straintronic devices based on the bended MoS2, MoTe2 and MoSTe nanoflakes, such as diodes and bipolar transistors with a bending-controllable sharpness of p-n junctions.

cond-mat.mtrl-sci↗

arXiv2020

Flexo-induced ferroelectricity in low dimensional transition metal dichalcogenides

We developed a Landau type theory for the description of polar phenomena in low-dimensional transition metal dichalcogenides (TMDs), specifically exploring flexoelectric origin of the polarization induced by a spontaneous bending and by inversion symmetry breaking due to the interactions with substrate. We consider the appearance of the spontaneous out-of-plane polarization due to the flexoelectric coupling with the strain gradient of the spontaneous surface rippling and surface-induced piezoelectricity. Performed calculations proved that the out-of-plane spontaneous polarization, originated from flexoelectric effect in a rippled TMD, is bistable and reversible by a non-uniform electric field. In contrast, the spontaneous polarization induced by a misfit strain and symmetry-sensitive surface-induced piezoelectric coupling, cannot be reversed by an external electric field. The special attention is paid to the spectral analysis of the linear dielectric susceptibility and gain factor, which enhancement is critically important for the observation of the polar phenomena in low-dimensional TMDs by the surface-enhanced vibrational spectroscopy.

cond-mat.mtrl-sci↗

arXiv2006

Thermal Characterization of Absorbing Coatings for Thermal Detectors of Radiation by Photopyroelectric Method

By photothermomodulatoin method the comparative study of thermal diffusivity of absorbing coating for sensitive elements of pyroelectric detectors of radiation formed from metal dispersion layer blacks, dielectric paint blacks and carbon nanotubes paint blacks has been performed. Prospects of using carbon nanotubes based black absorbing coatings for pyroelectric and other thermal detector application are shown.

cond-mat.mtrl-sci↗