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arXiv · 2412.03386

Diamond-defect engineering of NV- centers using ion beam irradiation

J. L. Sánchez Toural·J. García-Pérez·R. Bernardo-Gavito·D. Granados·A. Andrino-Gómez·G. García·J. L. Pau·M. A. Ramos·N. Gordillo
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Abstract

The interplay between ion beam modification techniques in the MeV range and the controlled generation of negatively charged nitrogen-vacancy (NV-) centers in nitrogen-doped synthetic diamond crystals is explored. An experimental approach employing both light (H+) and heavy (Br+6) ions was followed to assess their respective impacts on the creation of NV- centers, using different ion energies or fluences to generate varying amounts of vacancies. Photoluminescence spectroscopy was applied to characterize NV- and neutral NV0 centers. Initially, no NV centers were detected post-irradiation, despite the presence of substitutional nitrogen and vacancies. However, after annealing at 800C (and in some cases at 900C), most samples exhibited a high density of NV0 and especially NV- centers. This demonstrates that thermal treatment is essential for vacancy-nitrogen recombination and NV- formation, often through electron capture from nearby nitrogen atoms. Notably, we achieved high NV- densities without graphitization, which is essential for preserving the material's properties for quantum applications. This study underscores and quantifies the effectiveness of MeV-range ions in controlling vacancy distributions and highlights their potential for optimizing NV- center formation to enhance the sensitivity of diamond-based quantum magnetic sensors.

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BibTeXRIS

J. L. Sánchez Toural, J. García-Pérez, R. Bernardo-Gavito, D. Granados, A. Andrino-Gómez, G. García, J. L. Pau, M. A. Ramos, N. Gordillo. 2024-12-04. Diamond-defect engineering of NV- centers using ion beam irradiation. https://doi.org/10.1016/j.diamond.2024.111838

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