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arXiv · 2412.04547

Designing Flat Bands and Pseudo-Landau Levels in GaAs with Patterned Gates

Pierre A. Pantaleon·Zhen Zhan·Siddhartha E. Morales·Gerardo G. Naumis
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Abstract

We investigate the electronic properties of two-dimensional electron gases (2DEGs) subjected to a periodic patterned gate. By incorporating the superlattice (SL) potential induced by patterning into the Schrodinger equation, we develop a methodology for obtaining exact analytical solutions. These solutions enable us to construct a comprehensive phase diagram illustrating the emergence of narrow bands and pseudo-Landau levels driven by the SL potential. To complement the analytical approach, we employ a standard plane-wave formalism to track the evolution of the band structure as the SL strength increases. By breaking the inversion symmetry of the SL potential, we found a nontrivial Berry curvature. Furthermore, we introduce a self-consistent Hartree screening to account for the interplay between the SL potential and electronic interactions. Our findings not only reveal the emergence of a non-trivial quantum geometry and a competition between SL strength and electron-electron interactions, but also highlight the value of exact analytical solutions for understanding and engineering electronic phases in patterned 2DEG systems.

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Pierre A. Pantaleon, Zhen Zhan, Siddhartha E. Morales, Gerardo G. Naumis. 2024-12-05. Designing Flat Bands and Pseudo-Landau Levels in GaAs with Patterned Gates. https://doi.org/10.1103/ghyq-sz16

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