arXiv · 2412.06650
Magnetic Switching in Monolayer 2D Diluted Magnetic Semiconductors via Spin-to- Spin Conversion
Abstract
The integration of two-dimensional (2D) van der Waals (vdW) magnets with topological insulators or heavy metals holds great potential for realizing next-generation spintronic memory devices. However, achieving high-efficiency SOT switching of monolayer vdW magnets at room temperature poses a significant challenge, particularly without an external magnetic field. Here, we show field-free, deterministic, and nonvolatile SOT switching of perpendicular magnetization in the monolayer, diluted magnetic semiconductor (DMS), Fe-doped MoS2(Fe:MoS2) at up to 380 K with a current density of $7\times10^4 A cm^{-2}$. The in situ doping of Fe into monolayer MoS2 via chemical vapor deposition and the geometry-induced strain in the crystal break the rotational switching symmetry in Fe:MoS2, promoting field-free SOT switching by generating out-of-plane spins via spin-to-spin conversion. An apparent anomalous Hall effect (AHE) loop shift at a zero in-plane magnetic field verifies the existence of z spins in Fe:MoS2, inducing an antidamping-like torque that facilitates field-free SOT switching. A strong topological Hall effect (THE) was also observed, attributed to the interfacial Dzyaloshinskii-Moriya interaction (DMI), reducing the energy barrier for SOT switching. This field-free SOT application using a 2D ferromagnetic monolayer provides a new pathway for developing highly power-efficient spintronic memory devices.
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Siwei Chen, Zitao Tang, Mengqi Fang, Rui Sun, Xiaotong Zhang, Licheng Xiao, Seyed Sepehr Mohajerani, Na Liu, Yuze Zhang, Abdus Salam Sarkar, Dali Sun, Stefan Strauf, Eui- Hyeok Yang. 2024-12-09. Magnetic Switching in Monolayer 2D Diluted Magnetic Semiconductors via Spin-to- Spin Conversion. https://doi.org/10.1002/adfm.202418647
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