Fermi Velocity Dependent Critical Current in Ballistic Bilayer Graphene Josephson Junctions

Abstract

We perform transport measurements on proximitized, ballistic, bilayer graphene Josephson junctions (BGJJs) in the intermediate-to-long junction regime ($L>\xi$). We measure the device's differential resistance as a function of bias current and gate voltage for a range of different temperatures. The extracted critical current $I_{C}$ follows an exponential trend with temperature: $ \exp(-k_{B} T/ \delta E)$. Here $\delta E = \hbar \nu_F /2\pi L $: an expected trend for intermediate-to-long junctions. From $\delta E$, we determine the Fermi velocity of the bilayer graphene, which is found to increase with gate voltage. Simultaneously, we show the carrier density dependence of $\delta E$, which is attributed to the quadratic dispersion of bilayer graphene. This is in contrast to single layer graphene Josephson junctions, where $\delta E$ and the Fermi velocity are independent of the carrier density. The carrier density dependence in BGJJs allows for additional tuning parameters in graphene-based Josephson Junction devices.