arXiv subjects

Amis Sharma

Publications and source records attributed to Amis Sharma.

3 recordsLinked to original sources

arXiv2026

Improved Threshold for Particle-Induced Magnetic Avalanche in Single-Molecule Magnets Using Fe$_8$ Molecule

Extending the original work on the development of a magnetic avalanche detector using Mn$_{12}$-ac single-molecule magnet (SMM), we report the results on a significantly lower threshold magnetic avalanche detector using Fe$_8$ SMM. Fe$_8$ has an order of magnitude smaller relaxation time that is expected to produce at least 3 orders of magnitude lower avalanche threshold compared to Mn$_{12}$-ac. We confirm this experimentally through the detection of gamma particles with energy at least two orders of magnitude lower than the original Mn$_{12}$-ac detection demonstrated using alpha particles, limited by the experimentally available radiation source. The true threshold of avalanche may be significantly lower and will be explored with lower energy x-rays and potentially infrared photons.

hep-ex↗

arXiv2025

Particle Detection Using Magnetic Avalanches in Single-Molecule Magnet Crystals

The detection of a single quantum of energy with high efficiency and a low false positive rate is of considerable scientific interest, from serving as single quantum sensors of optical and infra-red photons to enabling the direct detection of low-mass dark matter. We confirm our initial experimental demonstration of magnetic avalanches induced by scattering of quanta in single-molecule magnet (SMM) crystals made of Mn$_{12}$-acetate, establishing the use of SMMs as particle detectors for the first time. Although the current setup has an energy threshold in the MeV regime, our results motivate the exploration of a wide variety of SMMs whose properties could allow for detection of sub-eV energy depositions.

hep-ex↗

arXiv2024

Fermi Velocity Dependent Critical Current in Ballistic Bilayer Graphene Josephson Junctions

We perform transport measurements on proximitized, ballistic, bilayer graphene Josephson junctions (BGJJs) in the intermediate-to-long junction regime ($L>\xi$). We measure the device's differential resistance as a function of bias current and gate voltage for a range of different temperatures. The extracted critical current $I_{C}$ follows an exponential trend with temperature: $ \exp(-k_{B} T/ \delta E)$. Here $\delta E = \hbar \nu_F /2\pi L $: an expected trend for intermediate-to-long junctions. From $\delta E$, we determine the Fermi velocity of the bilayer graphene, which is found to increase with gate voltage. Simultaneously, we show the carrier density dependence of $\delta E$, which is attributed to the quadratic dispersion of bilayer graphene. This is in contrast to single layer graphene Josephson junctions, where $\delta E$ and the Fermi velocity are independent of the carrier density. The carrier density dependence in BGJJs allows for additional tuning parameters in graphene-based Josephson Junction devices.

cond-mat.mes-hall↗