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arXiv · 2501.02801

Polarization-induced Quantum Spin Hall Insulator and Topological Devices in InAs Quantum Wells

Chenhao Liang·Sheng Zhang·Haohao Sheng·Quansheng Wu·Hongming Weng·Zhong Fang·Zhijun Wang
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Abstract

In this work, we predict the emergence of a quantum spin Hall insulator (QSHI) in conventional semiconductors, specifically InAs quantum wells, driven by a built-in polarization field. We propose QSHI InAs quantum wells as a platform to engineer topological field effect devices. More precisely, we first present a novel topological logic device that operates without a topological phase transition. Subsequently, we design a high-performance topological transistor due to the presence of edge states. Our approach provides a potential framework for harnessing the unique features of QSHI in device design, paving the way for future topological devices.

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Chenhao Liang, Sheng Zhang, Haohao Sheng, Quansheng Wu, Hongming Weng, Zhong Fang, Zhijun Wang. 2025-01-06. Polarization-induced Quantum Spin Hall Insulator and Topological Devices in InAs Quantum Wells. https://arxiv.org/abs/2501.02801

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