SearcharxivSearch

arXiv subjects

Chenhao Liang

Publications and source records attributed to Chenhao Liang.

5 recordsLinked to original sources

FELT: Generating Tactile Signals from Vision for Visuo-Tactile Manipulation

The sense of touch is central to manipulation, especially when vision is occluded or ambiguous. Although combining vision and touch improves manipulation, learning robust visuo-tactile policies requires substantial tactile data. Such data remains scarcer than visual data, because tactile sensors are fragile, specialized, and hard to standardize. To address this, we present Feature-Extracted Latent Tactile (FELT), a learning-based framework that synthesizes per-finger pressure tactile images from RGB observations, reducing the need for tactile-equipped data collection. FELT uses a large frozen visual encoder and a lightweight query decoder to predict tactile signals in a single feed-forward pass. To respect the physical topology of dual-finger tactile sensors, FELT decodes the left and right tactile sensor panels through separate branches, capturing the asymmetric contact patterns during interactions such as wiping, insertion, and in-hand rotation. At inference time, FELT only requires RGB data, allowing us to augment existing vision-only data with tactile observations, either as generated tactile images or as latent tactile features. Experiments on four contact-rich manipulation tasks demonstrate that both generated tactile images and latent tactile features improve policy success over vision-only baselines, with latent feature requiring no real tactile sensor during policy training or deployment. Supplementary material is available on our anonymous website: https://felt-tactile.github.io/.

cs.RO

Three-dimensional topological insulator feature of ternary chalcogenide Ge2Bi2Te5

The exploration of novel topological insulators (TIs) beyond binary chalcogenides has been accelerated in pursuit of exotic quantum states and device applications. Here, the layered ternary chalcogenide Ge2Bi2Te5 is identified as a three-dimensional TI. The bulk electronic structure of Ge2Bi2Te5 features a hole-type Fermi surface at Fermi level EF, which dominates the transport properties. Moreover, an unoccupied topological surface state with a Dirac point located at 290 meV above EF has been observed. Theoretical calculations confirm a bulk bandgap and a nontrivial Z2 topological invariant (000;1). The present study demonstrates that the material family of layered tetradymite-like ternary compounds is an important platform to explore exotic topological phenomena.

cond-mat.str-el

Optical Excitations of Flat Bands Induced by Exciton Condensation in Ta$_2$Pd$_3$Te$_{5}$

We report on the charge dynamics of Ta$_2$Pd$_3$Te$_5$ using temperature-dependent optical spectroscopy with polarized light. We observe a metal-insulator transition characterized by the collapse of Drude response and the emergence of sharp and narrow absorption peaks at low temperatures. Unlike previous excitonic insulator candidates such as TiSe$_2$ and Ta$_2$NiSe$_5$, where the excitonic order is intertwined with charge density wave or structural instabilities, the sharp features in Ta$_2$Pd$_3$Te$_5$ point to intrinsic excitonic excitations associated with ultra-flat bands driven by many-body renormalization of the band structure via spontaneous exciton condensation. Our findings thus provide clear-cut optical evidence for exciton condensation in a bulk crystal and establish Ta$_2$Pd$_3$Te$_5$ as a promising platform for exploring correlated quantum phases and novel excitonic phenomena.

cond-mat.mtrl-sci

Polarization-induced Quantum Spin Hall Insulator and Topological Devices in InAs Quantum Wells

In this work, we predict the emergence of a quantum spin Hall insulator (QSHI) in conventional semiconductors, specifically InAs quantum wells, driven by a built-in polarization field. We propose QSHI InAs quantum wells as a platform to engineer topological field effect devices. More precisely, we first present a novel topological logic device that operates without a topological phase transition. Subsequently, we design a high-performance topological transistor due to the presence of edge states. Our approach provides a potential framework for harnessing the unique features of QSHI in device design, paving the way for future topological devices.

cond-mat.mtrl-sci

VASP2KP: kp models and Lande g-factors from ab initio calculations

The $k\cdot p$ method is significant in condensed matter physics for the compact and analytical Hamiltonian. In the presence of magnetic field, it is described by the effective Zeeman's coupling Hamiltonian with Landé $ g $-factors. Here, we develop an open-source package VASP2KP (including two parts: vasp2mat and mat2kp) to compute $k\cdot p$ parameters and Landé $g$-factors directly from the wavefunctions provided by the density functional theory (DFT) as implemented in Vienna ab initio Simulation Package (VASP). First, we develop a VASP patch vasp2mat to compute matrix representations of the generalized momentum operator $ \mathbf{\hatπ}=\mathbf{\hat{p}}+\frac{1}{2mc^2}\left(\mathbf{\hat{s}}\times\nabla V(\mathbf{r})\right) $, spin operator $\mathbf{\hat{s}}$, time reversal operator $\hat{T}$ and crystalline symmetry operators $\hat{R}$ on the DFT wavefunctions. Second, we develop a python code mat2kp to obtain the unitary transformation $U$ that rotates the degenerate DFT basis towards the standard basis, and then automatically compute the $k\cdot p$ parameters and $g$-factors. The theory and the methodology behind VASP2KP are described in detail. The matrix elements of the operators are derived comprehensively and computed correctly within the projector augmented wave method. We apply this package to some materials, e.g., Bi$_2$Se$_3$, Na$_3$Bi, Te, InAs and 1H-TMD monolayers. The obtained effective model's dispersions are in good agreement with the DFT data around the specific wave vector, and the $g$-factors are consistent with experimental data. The VASP2KP package is available at https://github.com/zjwang11/VASP2KP.

cond-mat.mtrl-sci