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arXiv · 2502.04203

Large Negative Magnetoresistance in off-Stochiometric Topological Material PrSbTe

Gokul Acharya·Krishna Pandey·M. M. Sharma·Jian Wang·Santosh Karki Chhetri·Md Rafique Un Nabi·Dinesh Upreti·Rabindra Basnet·Josh Sakon·Jin Hu
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Abstract

Magnetic topological materials LnSbTe (Ln = lanthanide) have attracted intensive attention because of the presence of interplay between magnetism, topological, and electron correlations depending on the choices of magnetic Ln elements. Varying Sb and Te composition is an efficient approach to control structural, magnetic, and electronic properties. Here we report the composition-dependent properties in PrSbxTe2-x. We identified the tetragonal-to-orthorhombic structure transitions in this material system, and very large negative magnetoresistance in the x = 0.3 composition, which might be ascribed to the coupling between magnetism and transport. Such unusual magnetotransport enables PrSbxTe2-x topological materials as a promising platform for device applications.

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Gokul Acharya, Krishna Pandey, M. M. Sharma, Jian Wang, Santosh Karki Chhetri, Md Rafique Un Nabi, Dinesh Upreti, Rabindra Basnet, Josh Sakon, Jin Hu. 2025-02-06. Large Negative Magnetoresistance in off-Stochiometric Topological Material PrSbTe. https://doi.org/10.1103/physrevb.111.024421

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