Electrically active defects in 3C, 4H and 6H silicon carbide polytypes: A review

Ivana Capan

doi:10.3390/cryst15030255

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arXiv · 2502.14426

Electrically active defects in 3C, 4H and 6H silicon carbide polytypes: A review

Ivana Capan

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Abstract

This paper aims to critically review electrically active defects studied by junction spectroscopy techniques (deep-level transient spectroscopy and minority carrier transient spectroscopy) in the three most commonly used silicon carbide (SiC) polytypes: 3C-SiC, 4H-SiC, and 6H-SiC.

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Ivana Capan. 2025-02-20. Electrically active defects in 3C, 4H and 6H silicon carbide polytypes: A review. https://doi.org/10.3390/cryst15030255

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