Searcharxiv⌕ Search
Home/Archive/arXiv

arXiv · 2502.21111

All-dry pick-up and transfer method for quantum emitter arrays in hexagonal boron nitride

Mohammad Nasimuzzaman Mishuk·Mouli Hazra·Anand Kumar·Peter Dannberg·Aslı Çakan·Tobias Vogl
View original source ↗Read source document ↗Export metadata ↓

Abstract

Single photon emitters in hexagonal boron nitride are based on fluorescent point-like defects. These defects typically have exceptional photophysical properties and therefore been the focus of extensive research due to their potential to advance photonic quantum technologies. However, achieving scalable integration of these emitters to arbitrary platforms with high yield while retaining their characteristics remains a significant challenge, particularly when the target substrate is not compatible with the fabrication method. In this work, we introduce an all-dry transfer method aimed at addressing these challenges with improved effectiveness compared to existing techniques. This polymer stamp-assisted transfer method maintains high output and preserves the fundamental characteristics of the emitters while eliminating wet chemical processes. A comprehensive post-transfer characterization verified not only the maintenance of the defining characteristic of a single photon emitter, the second-order correlation function $g^{(2)}(0)$, but also showed improvement by about 46%. In contrast, the lifetime, emission spectrum, and the photostability showed only negligible change, demonstrating that the characteristics of the emitters were retained during the transfer process. This transfer technique has success rate of 81.8%, determined by the proportion of single photon emitters that retain their optical and preserve physical structure post-transfer. This high success rate shows the potential to scale the integration of single photon emitters across diverse platforms. We expect that this process contributes to the applications of boron nitride defects in quantum technologies.

Explore related subjects

physics.opticsquant-ph

Keep this discovery

BibTeXRIS

Mohammad Nasimuzzaman Mishuk, Mouli Hazra, Anand Kumar, Peter Dannberg, Aslı Çakan, Tobias Vogl. 2025-02-28. All-dry pick-up and transfer method for quantum emitter arrays in hexagonal boron nitride. https://arxiv.org/abs/2502.21111

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Two-step high-accuracy microwave frequency measurement and time-frequency analysis based on optical frequency combs

Broadband microwave frequency measurement and time-frequency analysis are crucial for applications such as electronic warfare. However, when it comes to ultra wideband signal analysis, traditional electronic methods have high analysis accuracy, but intrinsic electronic bottlenecks limit their real-time analysis. Here, we propose and experimentally demonstrate a two-step microwave frequency measurement and time-frequency analysis method based on optical frequency combs. The system first performs coarse frequency localization over the 0-40 GHz range using stimulated-Brillouin-scattering-assisted frequency-to-time mapping (FTTM) and dual-comb channelized reception. The dual-comb is then reapplied for downconverting the signal under test, followed by digital signal processing to achieve high-accuracy unambiguous frequency extraction. Experimental results show that the system achieves mean single-tone frequency measurement errors of less than 10 kHz over 0-40 GHz. We further experimentally measure multi-tone, linearly frequency-modulated, and V-shaped frequency-modulated signals, demonstrating the proposed method's capability for analyzing complex signals.

physics.optics↗
arXiv2026

A Two-Mirror Faceted Projection System for EUV Lithography

We propose an all-reflective two-mirror projection system for extreme ultraviolet (EUV) lithography operating at exposure wavelengths of $13.5$~nm (Mo/Si) and $11.2$~nm (Ru/Be), delivering a fourfold ($4\times$) demagnification of the periodic mask pattern at a numerical aperture approaching unity ($\mathrm{NA}_{\max} \approx 0.993$). In contrast to conventional EUV projection objectives that incorporate 6--10 aspheric mirrors with an overall optical throughput of less than $15\%$, the proposed design redirects each accepted discrete spatial diffraction order scattered by the mask onto the wafer via a dedicated pair of planar mirror facets. The number of reflections is strictly fixed at two for all accepted orders, retaining $50$--$60\%$ of the power leaving the mask in each accepted order. We derive a spatial geometry providing rigorous optical path length equalization across all diffraction orders, thereby removing order-dependent propagation phase shifts. Individually optimized 30-bilayer Bragg multilayer coatings are designed for each facet using the transfer matrix method combined with global evolutionary optimization algorithms. The architecture is generalized to a three-dimensional vector formulation with a two-dimensionally periodic mask. Utilizing inverse lithography technology, Fourier parameterization, and a differentiable electromagnetic modal waveguide solver, we solve the synthesis problem for binary absorber masks (La absorber on a Ru/Be/Sr multilayer mirror). We demonstrate simulated aerial images of sub-10-nm features on the wafer (isolated peaks with a full width at half maximum (FWHM) of approximately $5.4$~nm and line pairs with a critical dimension of $6$~nm) and find that the two peaks remain resolved for the tested wafer defocus values from $0$ to $5$~nm along the $z$-axis.

physics.optics↗
arXiv2026

Antimony for broadband nanophotonics across the ultraviolet, visible and infrared

Semimetal elemental antimony (Sb) nanostructures show great potential for applications where nanophotonic properties play a key role, such as phase-change optical memories, non-linear optical elements, photothermal therapy agents, photodetectors and photocatalysts. However, designing advanced Sb-based photonic devices critically requires an accurate and reliable knowledge of the optical response of bulk and nanoscale Sb. Herein, we report for the first time a fully consistent and accurately measured dielectric function for Sb nanoscale films in a wide spectral range from the ultraviolet to the far infrared (4 - 0.04 eV, i.e. ~ 0.3 - 30 $\mu$m), surpassing previous reports that explored a limited spectral range. It is found that the Sb spectral response is driven exclusively by giant interband transitions in the visible up to mid infrared (4 - 0.4 eV, i.e. ~ 0.3 - 3 $\mu$m), and that their contribution dominates over that of free carriers down to 0.12 eV (i.e. ~ 10 $\mu$m). Such spectral response enables Sb nanostructures to display spectrally selective and tunable nanophotonic resonances. First, we showcase interband plasmonic resonances in the visible-to-near infrared for Sb nanogratings. Second, we report giant refractive index dielectric resonances in the mid infrared for nanostructured Sb/dielectric/metal resonant cavities. These findings open a pathway to optimized planar Sb nanoscale designs enabling a tailored light-matter interaction, which will be useful for integrated data, telecom, medical, optoelectronic and energy conversion devices operating in a broad spectral range.

physics.optics↗