arXiv subjects

Tobias Vogl

Publications and source records attributed to Tobias Vogl.

At least 19 recordsLinked to original sources

arXiv2026

A proposal for a hybrid free-space optical quantum communication network with hexagonal boron nitride-based single photon sources

Hexagonal boron nitride (hBN) is known as a promising solid-state platform to host room temperature quantum emitters that produce high purity single photons. The bright and spectrally adaptable hBN emitters are space-compatible, making hBN well-suited for satellite-based free-space optical (FSO) quantum key distribution (QKD) at wavelengths where the atmospheric background is naturally suppressed. This paper presents a pathway to develop hBN emitters operating near the Ca-II Fraunhofer line (at 854 nm), enabling daylight FSO operation. Moreover, due to its compatibility with the first telecommunication window at 850 nm, it is possible to interface with optical fibers to bridge the `last mile' in a scenario where multiple end-users connect through a single optical ground station to a QKD satellite. We therefore introduce a concept that combines continuous operation of a quantum network, hybrid links to minimize deployment costs, and high data rates due to the use of realistic single photon sources. The realization would be an important milestone for the development of the quantum internet.

quant-ph↗

arXiv2026

Insights into the Nature of Quantum Emitters in Electron-Irradiated hexagonal Boron Nitride

Quantum emitters in hexagonal boron nitride (hBN) have emerged as a promising solid-state platform for quantum technology applications. However, a persistent challenge in the field is the unclear origin of many observed emission lines, particularly in the visible range, which can be difficult to distinguish from signals arising from organic or process-induced contamination during sample preparations and handling. This ambiguity limits both the reproducibility of emitter generation and the reliable identification of truly intrinsic quantum defects. This work provides a step-by-step framework to assess whether quantum emitters in electron-irradiated hBN are associated with organic contaminants introduced during sample preparation. We employ hyperspectral imaging, thermal annealing, and oxygen plasma etching to investigate the origin of the green-yellow emitters in electron-irradiated hBN. The combined results not only rule out organic contamination as the source of emission but also provide insight into the spectral variability, thermal stability, and vertical localization of the emitters generated in electron-irradiated hBN that was created without any pre- or post-processing. In addition, our experiments demonstrate the feasibility of creating stable emitters in hBN with thicknesses below 10 nm. These findings provide practical guidance for the identification and controlled implementation of hBN-based single-photon emitters in quantum photonic devices.

physics.optics↗

arXiv2026

Temperature-Dependent Emission Spectroscopy of Quantum Emitters in Hexagonal Boron Nitride

Color centers in hexagonal boron nitride (hBN) have attracted significant interest due to their potential applications in future optical quantum technologies. For most applications, scalable on-demand fabrication is a key requirement. Recent advances using localized electron irradiation have demonstrated near-identical emitters in the blue and yellow spectral regions. While the blue emitters have been demonstrated in cryogenic temperatures, the yellow emitters remain uncharacterized under such conditions. In this work, we therefore extended the study of yellow emitters to cryogenic temperatures. Initially, multiple spectral features were observed, prompting a systematic investigation that led to the identification of a defect emission centered around 547.5 nm with high brightness and excellent photostability. By tuning the excitation wavelength, we are able to distinguish Raman scattering peaks from the emitter emission. Further analysis of the vibronic emissions allowed us to identify an optical phonon mode, whose contribution becomes increasingly dominant at elevated temperatures. Photoluminescence excitation spectroscopy (PLE) reveals excitation through this phonon mode enhances the emission by almost 5-fold in cryogenic temperature. Temperature-dependent studies further elucidate the role of phonons in the emission process. These observations deepen our understanding of the nature of the emitters, opening new avenues for precise tuning of quantum light sources.

physics.optics↗

arXiv2026

Broadband Polarization Compensation with Link Segment Reconstruction for Quantum Optical Links

Polarization-encoded quantum communication requires compensation of polarization transformations induced by the optical links. If the compensator is embedded between two channel segments, the transformations before and after the compensator must be treated separately. Moreover, standard three-wave-plate polarization controllers can become non-universal when their retardances deviate from their ideal values. To address these two challenges, we introduce a four-wave plate compensator that synthesizes arbitrary SO(3) polarization transformations over a broad wavelength range, and an eight-Stokes vector protocol that reconstructs the two link-segment Mueller matrices on either side of the compensator. Our experiment reveals that the four-plate sequence suppresses polarization-induced excess quantum bit error rate (QBER) to the sub-percent level at an operating wavelength more than 100 nm from the design wavelength without further optimization. Combined with two auxiliary wavelengths, our scheme tracks the temperature-driven drift of a strongly wavelength-sensitive fiber spool while keeping the excess QBER below 1%. These results support flexible compensator placement and wavelength channel selection, as well as non-interruptive polarization control in wavelength-division-multiplexed quantum optical links.

quant-ph↗

arXiv2026

Quantum Emitters at Telecommunication Wavelengths based on Carbon Defects in Transition Metal Dichalcogenides

Low-dimensional materials have emerged as promising hosts for quantum emitters, whose emission typically arises from either strain-induced band bending or defect-induced two-level systems. Among these materials, transition metal dichalcogenide (TMD) monolayers have attracted particular attention; however, their performance is limited by strong photoluminescence (PL) quenching at room temperature. As TMDs transition from a direct to an indirect bandgap when moving from monolayers to multilayers, we herein propose a strategy to overcome this quenching limitation by exploiting the indirect bandgap of TMD bilayers in combination with a point defect doping. The indirect gap suppresses excitonic PL, while specific defects enable robust defect-mediated quantum emission. Using hybrid-functional density functional theory, we investigate substitutional carbon defects at chalcogen sites (S and Se) in WS2, WSe2, MoS2, and MoSe2 bilayers and comprehensively characterize their optical properties. Both neutral and singly negative charge states are found to be thermodynamically stable. Neutral defects exhibit singlet configurations with emission in the O- and C-band telecommunication windows, whereas negatively charged defects adopt doublet configurations featuring spin-selective transitions and near-infrared emission. The electron-phonon coupling strength, radiative lifetime, and dipole orientation are found to depend sensitively on both the host material and defect site, providing distinct fingerprints for experimental identification. Our findings, therefore, establish carbon-doped TMD bilayers as promising platforms for room-temperature defect-based quantum emitters operating at telecommunication wavelengths.

quant-ph↗

arXiv2026

Transition Dipole Rotation Beyond the Condon Approximation in Single hBN Quantum Emitters

The design of polarization-encoded quantum interfaces relies on the assumption that solid-state emitters possess static transition dipoles defined by the host lattice symmetry. Here, we demonstrate that the transition dipole moment of single hexagonal boron nitride quantum emitters is not a static property but rotates as a function of photon energy. Through high-resolution energy-resolved spectroscopy, we reveal a continuous rotation of the emission dipole orientation reaching up to $40^{\circ}$ across the vibronic manifold at room temperature, driven by coupling to the phonon bath. This spectral rotation is effectively suppressed at cryogenic temperatures (6 K), where the acoustic phonon population is negligible, identifying thermally activated lattice vibrations as the primary driver of the reorientation. First-principles calculations on two representative defects spanning weak and strong electron-phonon coupling regimes confirm that phonon-displaced geometries produce a systematic deviation of the transition dipole orientation from the zero-phonon line, with the magnitude scaling with vibronic coupling strength. The experimental observations and calculations demonstrate that single quantum emitters can operate beyond the Condon approximation, with the transition dipole acquiring a dependence on the instantaneous nuclear configuration. Our results identify a fundamental limit for polarization fidelity in solid-state quantum networks and connect solid-state single-emitter physics to a class of effects previously accessible only in ensemble measurements in molecular and biological spectroscopy.

quant-ph↗

arXiv2026

QuaNTUM: A Modular Quantum Communication Testbed for Scalable Fiber and Satellite Integration

Secure communication is essential for modern society, from financial transactions to critical infrastructure. As classical encryption faces threats from advancing computational power, quantum communication provides a fundamentally secure alternative based on physical laws. We present QuaNTUM (Quantum Network at the Technical University of Munich), a modular and extensible quantum communication testbed enabling scalable experiments across fiber-based campus networks and satellite-ground links. The terrestrial network connects research institutions in Garching near Munich via single-mode fibers in a star topology with polarization-maintaining components, multiplexers, and time-synchronized analysis modules. Active polarization control and real-time feedback support stable qubit transmission for high-fidelity quantum key distribution and entanglement distribution. A key feature is the integration of deterministic solid-state single-photon sources, including defects in hexagonal boron nitride and excited erbium atoms, with initial deployments on small satellites to bridge terrestrial and free-space channels. As an open-access platform, QuaNTUM enables protocol development, device benchmarking, and hybrid network research, providing a foundation for scalable quantum communication and future global quantum networks.

quant-ph↗

arXiv2025

Roadmap: 2D Materials for Quantum Technologies

Two-dimensional (2D) materials have emerged as a versatile and powerful platform for quantum technologies, offering atomic-scale control, strong quantum confinement, and seamless integration into heterogeneous device architectures. Their reduced dimensionality enables unique quantum phenomena, including optically addressable spin defects, tunable single-photon emitters, low-dimensional magnetism, gate-controlled superconductivity, and correlated states in Moiré superlattices. This Roadmap provides a comprehensive overview of recent progress and future directions in exploiting 2D materials for quantum sensing, computation, communication, and simulation. We survey advances spanning spin defects and quantum sensing, quantum emitters and nonlinear photonics, computational theory and data-driven discovery of quantum defects, spintronic and magnonic devices, cavity-engineered quantum materials, superconducting and hybrid quantum circuits, quantum dots, Moiré quantum simulators, and quantum communication platforms. Across these themes, we identify common challenges in defect control, coherence preservation, interfacial engineering, and scalable integration, alongside emerging opportunities driven by machine$-$learning$-$assisted design and integrated experiment$-$theory feedback loops. By connecting microscopic quantum states to mesoscopic excitations and macroscopic device architectures, this Roadmap outlines a materials-centric framework for integrating coherent quantum functionalities and positions 2D materials as foundational building blocks for next-generation quantum technologies.

quant-ph↗

arXiv2025

Nuclear Spin-Mediated Relaxation Mechanisms of the V$_{B}^-$ Center in hBN

The negatively charged boron vacancy $V_B^-$ defect in hexagonal boron nitride (hBN) has recently emerged as a promising spin qubit for sensing due to its high-temperature spin control and versatile integration into van der Waals structures. While extensive experiments have explored their coherence properties, much less is known about the spin relaxation time $T_1$ and its control-parameter dependence. In this work, we develop a parameter-free spin dynamics model based on the cluster-expansion technique to investigate $T_1$ relaxation mechanisms at low temperature. Our results reveal that the $V_B^-$ center constitutes a strongly coupled electron spin-nuclear spin core, which necessitates the inclusion of the coherent dynamics and derived memory effects of the three nearest-neighbor nitrogen nuclear spins. Using this framework, this work closely reproduces the experimentally observed $T_1$ time at $B = 90\,\mathrm{G}$ and further predicts the $T_1$ dependence on external magnetic field in the $0 \le B \le 2000\,\mathrm{G}$ interval, when the spin relaxation is predominantly driven by electron-nuclear and nuclear-nuclear flip-flop processes mediated by hyperfine and dipolar interactions. This study establishes a reliable and scalable approach for describing $T_1$ relaxation in $V_B^-$ centers and offers microscopic insights to support future developments in nuclear-spin-based quantum technologies.

quant-ph↗

arXiv2025

A Decoy-like Protocol for Quantum Key Distribution: Enhancing the Performance with Imperfect Single Photon Sources

Quantum key distribution (QKD) relies on single photon sources (SPSs), e.g. from solid-state systems, as flying qubits, where security strongly requires sub-Poissonian photon statistics with low second-order correlation values (\$g^{(2)}(0)\$). However, achieving such low \$g^{(2)}(0)\$ remains experimentally challenging. We therefore propose a decoy-like QKD protocol that relaxes this constraint while maintaining security. This enables the use of many SPSs with \$g^{(2)}(0) > \$0.1, routinely achieved in experiments but rarely considered viable for QKD. Monte Carlo simulations and our experiment from defects in hexagonal boron nitride show that, under linear loss, \$g^{(2)}(0)\$ remains constant, whereas photon-number-splitting (PNS) attacks introduce nonlinear effects that modify the measured \$g^{(2)}(0)\$ statistics. Exploiting this \$g^{(2)}(0)\$ variation as a diagnostic tool, our protocol detects PNS attacks analogously to decoy-state methods. Both single- and two-photon pulses consequently securely contribute to the secret key rate. Our protocol outperforms the Gottesman--Lo--Lutkenhaus--Preskill (GLLP) framework under high channel loss across various solid-state SPSs and is applicable to the satellite-based communication. Since \$g^{(2)}(0)\$ can be extracted from standard QKD experiments, no additional hardware is required. The relaxed \$g^{(2)}(0)\$ requirement simplifies the laser system for SPS generation. This establishes a practical route toward high-performance QKD without the need for ultra-pure SPSs.

quant-ph↗

arXiv2025

Defects in hexagonal boron nitride for quantum technologies

Atomic defects in solid-state materials are building blocks for future quantum technologies, such as quantum communication networks, computers, and sensors. Until recently, a handful of defects in a small selection of host materials have been possible candidates. Recent developments have revealed that hexagonal boron nitride, a wide-bandgap two-dimensional material, hosts single-photon-emitting atomic defects with access to optically addressable electronic and nuclear spins at room temperature. Now, atomically thin quantum devices that operate at ambient conditions are a possibility. In this perspective, we discuss the recent progress, and challenges, in understanding the fundamental photophysics of defects in hBN, as well as specific opportunities they present for the development of quantum technologies.

cond-mat.mes-hall↗

arXiv2025

Advancing the hBN Defects Database through Photophysical Characterization of Bulk hBN

Quantum emitters in hexagonal boron nitride (hBN) have gained significant attention due to a wide range of defects that offer high quantum efficiency and single-photon purity at room temperature. Most theoretical studies on hBN defects simulate monolayers, as this is computationally cheaper than calculating bulk structures. However, most experimental studies are carried out on multilayer to bulk hBN, which creates additional possibilities for discrepancies between theory and experiment. In this work, we present an extended database of hBN defects that includes a comprehensive set of bulk hBN defects along with their excited-state photophysical properties. The database features over 120 neutral defects, systematically evaluated across charge states ranging from -2 to 2 (600 defects in total). For each defect, the most stable charge and spin configurations are identified and used to compute the zero-phonon line, photoluminescence spectrum, absorption spectrum, Huang-Rhys (HR) factor, interactive radiative lifetimes, transition dipole moments, and polarization characteristics. Our analysis reveals that the electron-phonon coupling strength is primarily influenced by the presence of vacancies, which tend to induce stronger lattice distortions and broaden phonon sidebands. Additionally, correlation analysis shows that while most properties are independent, the HR factor strongly correlates with the configuration coordinates. All data are publicly available at https://h-bn.info, along with a new application programming interface (API) to facilitate integration with machine learning workflows. This database is therefore designed to bridge the gap between theory and experiment, aid in the reliable identification of quantum emitters, and support the development of machine-learning-driven approaches in quantum materials research.

quant-ph↗

arXiv2025

Photoluminescence-Based Gas Sensing with MoS2 Monolayers

Two-dimensional transition metal dichalcogenides (TMDs) are highly appealing for gas sensors, lab-on-a-chip devices and bio-sensing applications because of their strong light-matter interaction and high surface-to-volume ratio. The ability to grow these van der Waals materials on different substrates and waveguide geometries opens a horizon toward scalable on-chip photonic nanodevices. Here, we report on a versatile technique for real time remote optical gas sensing using two-dimensional TMDs. The adsorption of the gas molecules on the monolayer surface provides a gateway for gas sensing based on charge-transfer-induced photoluminescence variation. For gases that are weakly adsorbed on the surface of monolayer TMDs, purging the monolayers' surface by an inert gas like N2 can desorb gases from the monolayers at room temperature. We demonstrate CO, NO and NO2 detection by monitoring photoluminescence from semiconducting MoS2 monolayers grown on SiO2/Si chips at a level of 10 ppm with fast response time. Observations are supported by our density functional theory calculations, which predict a significant interaction between these gases and MoS2 monolayers. These findings may lead to advances in remote sensing, surface-sensitive bioanalytics and lab-on-a-chip sensors.

physics.app-ph↗

arXiv2025

All-dry pick-up and transfer method for quantum emitter arrays in hexagonal boron nitride

Single photon emitters in hexagonal boron nitride are based on fluorescent point-like defects. These defects typically have exceptional photophysical properties and therefore been the focus of extensive research due to their potential to advance photonic quantum technologies. However, achieving scalable integration of these emitters to arbitrary platforms with high yield while retaining their characteristics remains a significant challenge, particularly when the target substrate is not compatible with the fabrication method. In this work, we introduce an all-dry transfer method aimed at addressing these challenges with improved effectiveness compared to existing techniques. This polymer stamp-assisted transfer method maintains high output and preserves the fundamental characteristics of the emitters while eliminating wet chemical processes. A comprehensive post-transfer characterization verified not only the maintenance of the defining characteristic of a single photon emitter, the second-order correlation function $g^{(2)}(0)$, but also showed improvement by about 46%. In contrast, the lifetime, emission spectrum, and the photostability showed only negligible change, demonstrating that the characteristics of the emitters were retained during the transfer process. This transfer technique has success rate of 81.8%, determined by the proportion of single photon emitters that retain their optical and preserve physical structure post-transfer. This high success rate shows the potential to scale the integration of single photon emitters across diverse platforms. We expect that this process contributes to the applications of boron nitride defects in quantum technologies.

physics.optics↗

arXiv2025

Raman Signatures of Single Point Defects in Hexagonal Boron Nitride Quantum Emitters

Point defects in solid-state quantum systems are vital for enabling single-photon emission at specific wavelengths, making their precise identification essential for advancing applications in quantum technologies. However, pinpointing the microscopic origins of these defects remains a challenge. In this work, we propose Raman spectroscopy as a robust strategy for defect identification. Using density functional theory, we systematically characterize the Raman signatures of 100 defects in hexagonal boron nitride (hBN) spanning periodic groups III to VI, encompassing around 30,000 phonon modes. Our findings reveal that the local atomic environment plays a pivotal role in shaping the Raman lineshape, enabling the narrowing of potential defect candidates. Furthermore, we demonstrate that Raman spectroscopy can differentiate defects based on their spin and charge states as well as strain-induced variations, implying the versatility of this approach. Therefore, this study not only provides a comprehensive theoretical database of Raman spectra for hBN defects but also establishes a novel experiment framework for using tip-enhanced Raman spectroscopy to identify point defects. More broadly, our approach offers a universal method for defect identification in any quantum materials.

cond-mat.mtrl-sci↗

arXiv2024

Quantum Optics Applications of Hexagonal Boron Nitride Defects

Hexagonal boron nitride (hBN) has emerged as a compelling platform for both classical and quantum technologies. In particular, the past decade has witnessed a surge of novel ideas and developments, which may be overwhelming for newcomers to the field. This review provides an overview of the fundamental concepts and key applications of hBN, including quantum sensing, quantum key distribution, quantum computing, and quantum memory. Additionally, we highlight critical experimental and theoretical advances that have expanded the capabilities of hBN, in a cohesive and accessible manner. The objective is to equip readers with a comprehensive understanding of the diverse applications of hBN, and provide insights into ongoing research efforts.

quant-ph↗

arXiv2024

The hBN defects database: a theoretical compilation of color centers in hexagonal boron nitride

Color centers in hexagonal boron nitride (hBN) have become an intensively researched system due to their potential applications in quantum technologies. There has been a large variety of defects being fabricated, yet, for many of them, the atomic origin remains unclear. The direct imaging of the defect is technically very challenging, in particular since, in a diffraction-limited spot, there are many defects and then one has to identify the one that is optically active. Another approach is to compare the photophysical properties with theoretical simulations and identify which defect has a matching signature. It has been shown that a single property for this is insufficient and causes misassignments. Here, we publish a density functional theory (DFT)-based searchable online database covering the electronic structure of hBN defects (257 triplet and 211 singlet configurations), as well as their photophysical fingerprint (excited state lifetime, quantum efficiency, transition dipole moment and orientation, polarization visibility, and many more). All data is open-source and publicly accessible at https://h-bn.info and can be downloaded. It is possible to enter the experimentally observed defect signature and the database will output possible candidates which can be narrowed down by entering as many observed properties as possible. The database will be continuously updated with more defects and new photophysical properties (which can also be specifically requested by any users). The database therefore allows one to reliably identify defects but also investigate which defects might be promising for magnetic field sensing or quantum memory applications.

quant-ph↗

arXiv2024

Modeling the performance and bandwidth of single-atom adiabatic quantum memories

Quantum memories are essential for quantum repeaters that will form the backbone of the future quantum internet. Such memory can capture a signal state for a controllable amount of time after which this state can be retrieved. In this work, we theoretically investigated how atomic material and engineering parameters affect the performance and bandwidth of a quantum memory. We have applied a theoretical model for quantum memory operation based on the Lindblad master equation and adiabatic quantum state manipulation. The materials properties and their uncertainty are evaluated to determine the performance of Raman-type quantum memories by showcasing two defects in two-dimensional hexagonal boron nitride (hBN). We have derived a scheme to calculate the signal bandwidth based on the material parameters as well as the maximum efficiency that can be realized. The bandwidth depends on four factors: the signal photon frequency, the dipole transition moments in the electronic structure, cavity volume, and the strength of the external control electric field. As our scheme is general and independent of materials, it can be applied to many other quantum materials with a suitable three-level structure. We therefore provided a promising route for designing and selecting materials for quantum memories. Our work is therefore an important step toward the realization of a large-scale quantum network.

quant-ph↗