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arXiv · 2503.05133

An alternative application of GaAs-based light-emitting diodes: X-ray detection and imaging

Quan Yu·Fangbao Wang·Xin Yuan·Ying Liu·Lianghua Gan·Gangyi Xu·Wenzhong Shen·Liang Chen·Yueheng Zhang
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Abstract

GaAs-based light-emitting diodes (LEDs) are commonly employed in a variety of applications, including medical imaging, biosensing, optical communications, and night vision. In this paper, we present an alternative application of GaAs-based LED with SI-GaAs substrate for X-ray detection and imaging. The mechanism relies on the semiconductor frequency down-conversion process, where the SI-GaAs substrate acts as a photodetector (PD). Upon X-ray irradiation, the generated photocurrent by the SI-GaAs substrate drives the LED to emit NIR photons which can be detect by a low-cost CCD. We demonstrate direct X-ray detection and present preliminary imaging results, providing another example of the applicability of the PD-LED design for optical frequency conversion. The proposed LED X-ray detector leverages mature materials and fabrication processes. The application of the frequency down-conversion concept makes it possible for pixel-less imaging using a large single imaging unit, eliminating the need for readout circuits. This PD-LED architecture offers an alternative approach to direct X-ray detection and imaging, characterized by higher absorption, improved image resolution, and enhanced material stability.

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Quan Yu, Fangbao Wang, Xin Yuan, Ying Liu, Lianghua Gan, Gangyi Xu, Wenzhong Shen, Liang Chen, Yueheng Zhang. 2025-03-07. An alternative application of GaAs-based light-emitting diodes: X-ray detection and imaging. https://arxiv.org/abs/2503.05133

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