SearcharxivSearch

arXiv subjects

Gangyi Xu

Publications and source records attributed to Gangyi Xu.

3 recordsLinked to original sources

Broadband Continuous Frequency Tuning in Non-Hermitian Laser Arrays Enabled by Mode-Switching Boundary Topology

Broadband and continuous frequency tuning is central to the versatility of semiconductor lasers, yet existing approaches typically rely on external moving components, limiting scalability and integration. Here we demonstrate broadband continuous frequency tuning in a non-Hermitian laser array achieved solely by controlling the pump currents. We show that in two coupled sub-lasers with frequency detuning ($\Delta\omega$) and relative loss ($\Delta\alpha$), a mode-switching boundary emerges in the ($\Delta\omega$, $\Delta\alpha$) parameter space, shaping the frequency landscape of the lower-loss supermode. The topology of this boundary comprises pseudo-symmetric (PS) and pseudo-symmetry-broken (PSB) branches connected at an exceptional point (EP). When tuning trajectories cross the PS branch, frequency tuning is discontinuous, whereas trajectories crossing the PSB branch enable continuous tuning; trajectories through the EP yield the maximum continuous tuning range. Experiments using two coupled terahertz quantum cascade lasers demonstrate continuous tuning over 10 GHz, enabled by arbitrarily many combinations of pump currents. Extending this approach to a multi-element array further expands the continuous tuning range to 163 GHz. These results establish a general route to broadband continuous tuning in moving-part-free semiconductor lasers and highlight the potential for dynamic eigenvalue engineering in non-Hermitian photonics and beyond.

physics.optics

An alternative application of GaAs-based light-emitting diodes: X-ray detection and imaging

GaAs-based light-emitting diodes (LEDs) are commonly employed in a variety of applications, including medical imaging, biosensing, optical communications, and night vision. In this paper, we present an alternative application of GaAs-based LED with SI-GaAs substrate for X-ray detection and imaging. The mechanism relies on the semiconductor frequency down-conversion process, where the SI-GaAs substrate acts as a photodetector (PD). Upon X-ray irradiation, the generated photocurrent by the SI-GaAs substrate drives the LED to emit NIR photons which can be detect by a low-cost CCD. We demonstrate direct X-ray detection and present preliminary imaging results, providing another example of the applicability of the PD-LED design for optical frequency conversion. The proposed LED X-ray detector leverages mature materials and fabrication processes. The application of the frequency down-conversion concept makes it possible for pixel-less imaging using a large single imaging unit, eliminating the need for readout circuits. This PD-LED architecture offers an alternative approach to direct X-ray detection and imaging, characterized by higher absorption, improved image resolution, and enhanced material stability.

physics.optics

High-speed ultra-broadband detection based on interfacial work function internal photoemission detector

High-speed ultra-broadband detectors play a crucial role in aerospace technology, and national security etc. The interfacial work function internal photoemission (IWIP) detector employs multiple absorption mechanism comprehensively across different wavelength band to achieve complete photon type detection, which makes it possible to realize high-speed and ultra-broadband simultaneously. We propose a ratchet heterojunction IWIP (HEIWIP) detector, which shows 3-165THz ultra-broadband coverage. The high-speed response is investigated in detail by both microwave rectification technology and high-speed modulated terahertz light. Up to 5.1GHz 3dB bandwidth is acquired in terms of microwave rectification measurement. And 4.255GHz inter-mode optical beat note signal was successfully detected.

physics.ins-det