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arXiv · 2503.08476

Non-magnetic Fractional Conductance in High Mobility InAs Quantum Point Contacts

I. Villar Rodriguez·Y. Gul·C. P. Dempsey·J. T. Dong·S. N. Holmes·C. J. Palmstrom·M. Pepper
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Abstract

In this letter, we report the magneto-electronic properties of high mobility InAs quantum point contacts grown on InP substrates. The 1D conductance reaches a maximum value of 17 plateaus, quantized in units of 2e^2/h, where e is the fundamental unit of charge and h is Planck's constant. The in-plane effective g-factor was estimated to be -10.9 +/- 1.5 for subband N = 1 and -10.8 +/- 1.6 for subband N = 2. Furthermore, a study of the non-magnetic fractional conductance states at 0.2 (e^2/h) and 0.1(e2/h is provided. While their origin remains under discussion, evidence suggests that they arise from strong electron-electron interactions and momentum-conserving backscattering between electrons in two distinct channels within the 1D region. This phenomenon may also be interpreted as an entanglement between the two channel directions facilitated by momentum-conserving backscattering.

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I. Villar Rodriguez, Y. Gul, C. P. Dempsey, J. T. Dong, S. N. Holmes, C. J. Palmstrom, M. Pepper. 2025-03-11. Non-magnetic Fractional Conductance in High Mobility InAs Quantum Point Contacts. https://arxiv.org/abs/2503.08476

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