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arXiv · 2504.00311

High-performance Hybrid Lithium Niobate Electro-optic Modulators Integrated with Low-loss Silicon Nitride Waveguides on a Wafer-scale Silicon Photonics Platform

Arif Rahman·Forrest Valdez·Viphretuo Mere·Camiel Op de Beeck·Pieter Wuytens·Shayan Mookherjea
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Abstract

Heterogeneously-integrated electro-optic modulators (EOM) are demonstrated using the hybrid-mode concept, incorporating thin-film lithium niobate (LN) by bonding with silicon nitride (SiN) passive photonics. At wavelengths near 1550 nm, these EOMs demonstrated greater than 30 dB extinction ratio, 3.8 dB on-chip insertion loss, a low-frequency half-wave voltage-length product ($V_\pi L$) of 3.8 $V.{}cm$, and a 3-dB EO modulation bandwidth exceeding 110 GHz. This work demonstrates the combination of multi-layer low-loss SiN waveguides with high-performance LN EOMs made in a scalable fabrication process using conventional low-resistivity silicon (Si) wafers.

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Arif Rahman, Forrest Valdez, Viphretuo Mere, Camiel Op de Beeck, Pieter Wuytens, Shayan Mookherjea. 2025-04-01. High-performance Hybrid Lithium Niobate Electro-optic Modulators Integrated with Low-loss Silicon Nitride Waveguides on a Wafer-scale Silicon Photonics Platform. https://arxiv.org/abs/2504.00311

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