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arXiv · 2504.04149

Erbium-doped lithium niobate waveguide amplifier enhanced by an inverse-designed on-chip reflector

Zhiwei Wei·Jiangwei Wu·Chengyu Chen·Hao Li·Wenjie Wan·Xianfeng Chen·Yuping Chen
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Abstract

This study presents a 3.6-cm-long erbium-doped lithium niobate waveguide amplifier enhanced by an inverse-designed on-chip reflector. Integrating the reflector at the waveguide end yielded an internal net gain of 40.5 dB, achieving a 17.3 dB gain improvement compared to a comparable reflector-free amplifier under small signal conditions. By eliminating bidirectional pumping requirements, the system complexity was reduced. These results highlight a novel strategy for optimizing integrated optical amplifiers, combining high gain with simplified architecture. The approach holds promise for advancing high-density photonic integrated systems, demonstrating the efficacy of inverse design in tailoring photonic device performance for practical applications.

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Zhiwei Wei, Jiangwei Wu, Chengyu Chen, Hao Li, Wenjie Wan, Xianfeng Chen, Yuping Chen. 2025-04-05. Erbium-doped lithium niobate waveguide amplifier enhanced by an inverse-designed on-chip reflector. https://arxiv.org/abs/2504.04149

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