Ferroelastic Domain Induced Electronic Modulation in Halide Perovskites

Ganesh Narasimha; Maryam Bari; Benjamin J Lawrie; Ilia N Ivanov; Marti Checa; Sumner B. Harris; Zuo-Guang Ye; Rama Vasudevan; Yongtao Liu

arXiv · 2504.17882

Ferroelastic Domain Induced Electronic Modulation in Halide Perovskites

Ganesh Narasimha·Maryam Bari·Benjamin J Lawrie·Ilia N Ivanov·Marti Checa·Sumner B. Harris·Zuo-Guang Ye·Rama Vasudevan·Yongtao Liu

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Abstract

Lead halide perovskites have emerged as promising materials for optoelectronic applications due to their exceptional properties. In the all-inorganic CsPbBr3 perovskites, ferroelastic domains formed during phase transitions enhance bulk transport and emissive efficiency. However, the microscopic mechanisms governing carrier dynamics remain poorly understood. In this study, we employ cathodoluminescence (CL) and micro-Raman spectroscopy to image and investigate the electronic properties of the ferroelastic domain walls in CsPbBr3 single crystals. CL measurements reveal a reduced emissive yield and a slight redshift in emission at the domain walls. Further, micro-Raman studies provide spatially resolved mapping of vibrational modes, exhibiting second-order phonon modes localized at the domain boundaries. Our findings suggest that electron-phonon coupling at twin domain walls plays a critical role in facilitating efficient charge separation, thereby improving the optoelectronic performance of the CsPbBr3 perovskites.

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Ganesh Narasimha, Maryam Bari, Benjamin J Lawrie, Ilia N Ivanov, Marti Checa, Sumner B. Harris, Zuo-Guang Ye, Rama Vasudevan, Yongtao Liu. 2025-04-24. Ferroelastic Domain Induced Electronic Modulation in Halide Perovskites. https://arxiv.org/abs/2504.17882

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