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arXiv · 2504.20796

Desynchronization in multilayer p-i-n drift step recovery diode

Jorge Pena Lozano·Kindred Griffis·Dimash Aimurzayev·Gregory Wierzba·Sergey V. Baryshev
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Abstract

The impact semiconductor drift step recovery diodes (DSRDs) can have on high-power microwave applications make them a device of interest for future solid-state electronics. However, there is little known about their functionality and degradation under over-voltaging or high average power dissipation conditions that could therefore hinder their continual design and optimization toward better performance. The experiments on a Si seven layer DSRD conducted in the present paper allowed to broaden the understanding of its opening switching performance under over-voltaging conditions. A striking desynchronization was discovered and linked to junction and electro-neutral region damage through experiments and PSpice modelling.

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Jorge Pena Lozano, Kindred Griffis, Dimash Aimurzayev, Gregory Wierzba, Sergey V. Baryshev. 2025-04-29. Desynchronization in multilayer p-i-n drift step recovery diode. https://arxiv.org/abs/2504.20796

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