Realistic Monte Carlo simulations of silicon 4D-trackers

Abstract

Simulation-guided design represents a fundamental contribution towards the development of modern semiconductor devices aiming to reach high-performance particle detection, identification and tracking, and constitutes a strategic element of the new detector R&D roadmap. At the same time, the complexity of microelectronic structures and the related detection systems is drastically increasing, also thanks to the progressive scaling down of the design rules with the process technology. Owing to the capability to embed a detailed description of the ionization mechanism into a device-level framework, as well as capture the stochastic nature of signal formation, the Monte Carlo (MC) approach has become the most recommended strategy to achieve reliable predictions of the dynamic properties of particle detectors in realistic settings such as in-beam experiments. This work gives an overview of the key aspects characterizing MC tools, with particular emphasis on the Garfield++ simulation toolkit. To this end, the analysis of some specific case studies related to the design of silicon particle detectors for timing and 4D-tracking in both current and future high-energy physics experiments will be presented, showing the comparison of measured and simulated figures-of-merit and highlighting strengths and open challenges of this approach. The examples are intentionally chosen from the family of Monolithic Active Pixel Sensors, as they represent some of the most promising and relevant advancements in particle detection, and because the CMOS monolithic integration offers the most versatile platform for testing the robustness of numerical designs.