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arXiv · 2505.09227

High Chern Number Quantum Anomalous Hall States in Haldane-Graphene Multilayers

Yuejiu Zhao·Long Zhang·Fu-Chun Zhang
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Abstract

We consider a rhombohedral-stacked $N$-layer graphene coupled to a monolayer of Haldane model. We show that high order Dirac points in multilayer graphene can be gapped out by topological proximity effect of the Haldane model layer, leading to total Chern number $|C|=N+1$ quantum anomalous Hall states. This provides a new way to construct high Chern number quantum anomalous Hall states in realistic crystalline graphene systems.

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Yuejiu Zhao, Long Zhang, Fu-Chun Zhang. 2025-05-14. High Chern Number Quantum Anomalous Hall States in Haldane-Graphene Multilayers. https://doi.org/10.1103/vyf8-9cw9

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