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arXiv · 2505.15238

Rare-Earth Nitrides: Fundamental Advances and Applications in Cryogenic Electronics

W. F. Holmes-Hewett·J. D. Miller·H. G. Ahmad·S. Granville·B. J. Ruck
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Abstract

Driven by the pursuit of high-performance electronic devices, research into novel materials with properties appropriate for cryogenic applications has unveiled the exceptional properties of the rare-earth nitride series of intrinsic ferromagnetic semiconductors. Here we report on the field focusing on developments, since the most recent comprehensive review [1], which enable applications in cryogenic electronic devices.

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W. F. Holmes-Hewett, J. D. Miller, H. G. Ahmad, S. Granville, B. J. Ruck. 2025-05-21. Rare-Earth Nitrides: Fundamental Advances and Applications in Cryogenic Electronics. https://arxiv.org/abs/2505.15238

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