arXiv subjects

B. J. Ruck

Publications and source records attributed to B. J. Ruck.

At least 19 recordsLinked to original sources

arXiv2026

Van Hove singularities at the $L$-face of the lutetium nitride phonon dispersion

We report the structural and vibrational properties of the prototypical 4$f$-filled nonmagnetic member LuN of the lanthanide nitrides, \textit{Ln}N, with elastic and inelastic neutron scattering data at $4$~K. We find a peak in the generalized density of states which, through input from a DFT+$U$ computation, we ascribe to a van Hove singularity on the fourfold-degenerate $L$-face of the Brillouin zone. This work advances the understanding of phonon dynamics in \textit{Ln}N beyond the $\Gamma$-point.

cond-mat.mtrl-sci↗

arXiv2025

Raman signature of cation vacancies in rare-earth nitrides

We report a coordinated Raman/computation study of the rare-earth nitrides, a series of intrinsic ferromagnetic semiconductors, to reveal the presence of cation vacancies. Their presence is signaled by a Raman-active vibrational mode at 1100-1400 cm$^{-1}$, rising steadily as the lattice contracts across the series. The mode's frequency is in excellent agreement with the computed breathing-mode vibration of the six nitrogen ions surrounding cation vacancies. The discovery of such cation vacancies opens the door for hole doping that has so far been lacking in the exploitation of rare-earth nitrides.

cond-mat.mtrl-sci↗

arXiv2025

Rare-Earth Nitrides: Fundamental Advances and Applications in Cryogenic Electronics

Driven by the pursuit of high-performance electronic devices, research into novel materials with properties appropriate for cryogenic applications has unveiled the exceptional properties of the rare-earth nitride series of intrinsic ferromagnetic semiconductors. Here we report on the field focusing on developments, since the most recent comprehensive review [1], which enable applications in cryogenic electronic devices.

cond-mat.mtrl-sci↗

arXiv2025

Conductivity of high-mobility epitaxial GdN

We report electron transport studies of a (001) GdN film grown on the square net presented by the (001) surface of LaAlO3, motivated by recent advances in epitaxial thin-film growth of several lanthanide nitrides. The film we have grown for the purpose is characterised by in-situ RHEED and ex-situ XRD and XRR to show the best crystallinity and smoothest surfaces we have accomplished to date. It shows a clear ferromagnetic transition at $\sim70$ K with a saturation magnetisation within uncertainly of 7 $μ$B/Gd$^{3+}$ ion, a remanence of 5 $μ$B/Gd$^{3+}$ ion and a coercive field of $\sim$5 mT. It is doped by $\sim1$% nitrogen vacancies that introduce $\sim3\times10^{20}$ cm$^{-3}$ electrons into the conduction band. The resistivity shows transport in a conduction band doped to degeneracy by $\sim0.01$ electrons/formula unit with a residual resistance ratio of 2 and a Hall resistivity permitting easily-separated ordinary and anomalous Hall components. The mobility is an order of magnitude larger than we have found in earlier films.

cond-mat.mtrl-sci↗

arXiv2024

Spin polarisation and non-isotropic effective mass in the conduction band of GdN

GdN is a ferromagnetic semiconductor which has seen increasing interest in the preceding decades particularly in the areas of spin- and superconducting- based electronics. Here we report a detailed computational study and optical spectroscopy study of the electronic structure of stoichiometric and nitrogen vacancy doped GdN. Based on our calculations we provide the effective mass tensor for undoped GdN, and some indicative values for electron doped GdN. Such a property is valuable as it can directly affect device design, and be directly measured experimentally to validate the existing computation results.

cond-mat.mtrl-sci↗

arXiv2023

Unconventional superconductivity and quantum criticality in SmN

Nitrogen vacancy doped SmN$_{1-δ}$ is a semiconductor which lies in the intermediary between insulating-ferromagnetic SmN and metallic-anti-ferromagnetic Sm. The dopant electrons resulting from nitrogen vacancies have recently been predicted to lie in a band precipitated by a majority-spin 4$f$ level on the six Sm ions neighbouring each nitrogen vacancy, an in-gap state $\sim$1 eV below the 4$f$ states in stoichiometric SmN. Optical data reported here corroborate the prediction along with an extended computational study. Electrical transport measurements show the transition from an insulating to metallic state with a hopping type conductivity in dilutely doped films. We provide strong evidence that electron transport is mediated by a dispersion-less majority spin defect band implying triplet type superconductivity, the location of which in the SmN-Sm phase diagram suggests the location of a quantum critical point.

cond-mat.supr-con↗

arXiv2022

Following enhanced Sm spin projection in Gd$_x$Sm$_{1-x}$N

The rare-earth nitrides form a series of structurally simple $intrinsic$ ferromagnetic semiconductors, a rare class of both fundamental interest and application potential. Within the series there is a wide range of magnetic properties relating to the spin/orbit contributions to the ferromagnetic ground states. We report an x-ray magnetic circular dichroism investigation of the spin/orbit magnetic dipole alignments of Sm and Gd ions in epitaxial Gd$_x$Sm$_{1-x}$N films. The Sm spin-alignment expectation value $\langle S_{z} \rangle$ is seen to be strengthened by the Gd/Sm exchange interaction, providing guidance concerning the composition for an angular momentum compensation point (where the volume-averaged total angular momentum of a film is zero).

cond-mat.mtrl-sci↗

arXiv2019

4f Conduction in the Magnetic Semiconductor NdN

We report the growth of films of the intrinsic ferromagnetic semiconductor NdN, and an investigation of their optical and transport properties. There is clear evidence of a strong anomalous Hall effect as expected from a 4f conduction channel, supported by an optical absorption into a 4f or 4f/5d hybridized tail at the base of the conduction band. The results reveal a heavy-fermion 4f/5d band lying where it can be occupied at controllable levels with nitrogen-vacancy donors.

cond-mat.str-el↗

arXiv2019

Optical Spectroscopy of SmN: Evidence for 4f Transport

The rare-earth nitride ferromagnetic semiconductors owe their varying magnetic properties to the progressive filling of 4f shell across the series. Recent electrical transport measurements on samarium nitride, including the observation of superconductivity, have been understood in terms of a contribution from a 4f transport channel. Band structure calculations generally locate an empty majority 4f-band within the conduction band although over a wide range of possible energies. Here we report optical reflection and transmission measurements on samarium nitride between 0.01 eV to 4 eV, that demonstrate clearly that the 4f band forms the bottom of the conduction band. Results at the lowest energies show no free carrier absorption, indicating a semiconducting ground state, and supporting earlier conclusions based on transport measurements.

cond-mat.str-el↗

arXiv2016

Perpendicular magnetic anisotropy in Co$_2$MnGa

We report perpendicular magnetic anisotropy in the ferromagnetic Heusler alloy Co$_2$MnGa in a MgO/Co$_2$MnGa/Pd trilayer stack for Co$_2$MnGa thicknesses up to 3.5 nm. There is a thickness- and temperature-dependent spin reorientation transition from perpendicular to in-plane magnetic anisotropy which we study through the anomalous Hall effect. From the temperature dependence of the anomalous Hall effect, we observe the expected scaling of $ρ_{xy}^{AHE}$ with $ρ_{xx}$, suggesting the intrinsic and side-jump mechanisms are largely responsible for the anomalous Hall effect in this material.

cond-mat.mtrl-sci↗

arXiv2016

Superconductivity in the ferromagnetic semiconductor SmN

The discovery of materials that simultaneously host different phases of matter has often initially confounded, but ultimately enhanced, our basic understanding of the coexisting types of order. The associated intellectual challenges, together with the promise of greater versatility for potential applications, have made such systems a focus of modern materials science. In particular, great efforts have recently been devoted to making semiconductors ferromagnetic and metallic ferromagnets superconducting. Here we report the unprecedented observation of a heavily donor-doped ferromagnetic semiconductor, SmN, becoming superconducting with ferromagnetism remaining intact. The extremely large exchange splitting of the conduction and valence bands in this material necessitates that the superconducting order hosted by SmN is of an unconventional triplet type, most likely exhibiting p-wave symmetry. Short range spin fluctuations, which are thought to be the cause of pairing interactions in currently known triplet superconductors, are quenched in SmN, suggesting its superconductivity to be the result of phonon- or Coulomb-mediated pairing mechanisms. This scenario is further supported by the inferred heavy mass of superconducting charge carriers. The unique near-zero magnetisation associated with the ferromagnetic state in SmN further aids its coexistence with superconductivity. Presenting this novel material system where semiconducting, ferromagnetic and superconducting properties are combined provides a versatile new laboratory for studying quantum phases of matter. Moreover it is a major step towards identifying materials that merge superconductivity and spintronics, urgently needed to enable the design of electronic devices with superior functionality.

cond-mat.supr-con↗

arXiv2015

On the ferromagnetic ground state of SmN

SmN is a ferromagnetic semiconductor with the unusual property of an orbital-dominant magnetic moment that is largely cancelled by an antiparallel spin contribution, resulting in a near-zero net moment. However, there is a basic gap in the understanding of the ferromagnetic ground state, with existing density functional theory calculations providing values of the $4f$ magnetic moments at odds with experimental data. To clarify the situation, we employ an effective $4f$ Hamiltonian incorporating spin-orbit coupling, exchange, the crystal field, and $J$-mixing to calculate the ground state $4f$ moments. Our results are in excellent agreement with experimental data, revealing moderate quenching of both spin and orbital moments to magnitudes of $\sim 2~μ_B$ in bulk SmN, enhanced to an average of $\sim 3~μ_B$ in SmN layers within a SmN/GdN superlattice. These calculations provide insight into recent studies of SmN showing that it is an unconventional superconductor at low temperatures and displays twisted magnetization phases in magnetic heterostructures.

cond-mat.mtrl-sci↗

arXiv2015

Twisted phase of the orbital-dominant ferromagnet SmN in a GdN/SmN heterostructure

The strong spin-orbit interaction in the rare-earth elements ensures that even within a ferromagnetic state there is a substantial orbital contribution to the ferromagnetic moment, in contrast to more familiar transition metal systems, where the orbital moment is usually quenched. The orbital-dominant magnetization that is then possible within rare-earth systems facilitates the fabrication of entirely new magnetic heterostructures, and here we report a study of a particularly striking example comprising interfaces between GdN and SmN. Our investigation reveals a twisted magnetization arising from the large spin-only magnetic moment in GdN and the nearly zero, but orbital-dominant, moment of SmN. The unusual twisted phase is driven by (i) the similar ferromag- netic Gd-Gd, Sm-Sm and Gd-Sm exchange interactions, (ii) a SmN Zeeman interaction 200 times weaker than that of GdN, and (iii) the orbital-dominant SmN magnetic moment. The element specificity of X-ray magnetic circular dichroism (XMCD) is used in seperate modes probing both bulk and surface regions, revealing the depth profile of the twisting magnetization.

cond-mat.mtrl-sci↗

arXiv2014

Highly resistive epitaxial Mg-doped GdN thin films

We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional doping with magnesium. Mg-doped GdN layers with resistivities of 1000 Ω.cm and carrier concentrations of 10E16 cm-3 are obtained for films with Mg concentrations up to 5 x 10E19 atoms/cm3. X-ray diffraction rocking curves indicate that Mg-doped GdN films have crystalline quality very similar to undoped GdN films, showing that the Mg doping did not affect the structural properties of the films. A decrease of the Curie temperature with decreasing the electron density is observed, supporting a recently suggested magnetic polaron scenario [F. Natali et al., Phys. Rev. B 87, 035202 (2013)].

cond-mat.mtrl-sci↗

arXiv2013

Europium nitride: A novel diluted magnetic semiconductor

Europium nitride is semiconducting and contains non-magnetic \3+, but sub-stoichiometric EuN has Eu in a mix of 2+ and 3+ charge states. We show that at \2+ ~concentrations near 15-20% EuN is ferromagnetic with a Curie temperature as high as 120 K. The \3+ ~polarization follows that of the \2+, confirming that the ferromagnetism is intrinsic to the EuN which is thus a novel diluted magnetic semiconductor. Transport measurements shed light on the likely exchange mechanisms.

cond-mat.mtrl-sci↗

arXiv2013

Electric field and photo-excited control of the carrier concentration in GdN

We present both electric-field and photo-excited control of the carrier concentration in GdN. There is no evidence in the results of a carrier-mediated contribution to the Gd-Gd exchange interaction that has been suggested to explain a measured Curie temperature that is much higher than obtained within theoretical treatments. Persistent carrier concentrations seen in both the field-effect and photo-induced conductivities point to a distribution of long-lived trap states below the conduction band, very likely centred at nitrogen vacancies

cond-mat.mtrl-sci↗

arXiv2013

Spin/orbit moment imbalance in the near-zero moment ferromagnetic semiconductor SmN

SmN is ferromagnetic below 27 K, and its net magnetic moment of 0.03 Bohr magnetons per formula unit is one of the smallest magnetisations found in any ferromagnetic material. The near-zero moment is a result of the nearly equal and opposing spin and orbital moments in the 6H5/2 ground state of the Sm3+ ion, which leads finally to a nearly complete cancellation for an ion in the SmN ferromagnetic state. Here we explore the spin alignment in this compound with X-ray magnetic circular dichroism at the Sm L2,3 edges. The spectral shapes are in qualitative agreement with computed spectra based on an LSDA+U (local spin density approximation with Hubbard-U corrections) band structure, though there remain differences in detail which we associate with the anomalous branching ratio in rare-earth L edges. The sign of the spectra determine that in a magnetic field the Sm 4f spin moment aligns antiparallel to the field; the very small residual moment in ferromagnetic SmN aligns with the 4f orbital moment and antiparallel to the spin moment. Further measurements on very thin (1.5 nm) SmN layers embedded in GdN show the opposite alignment due to a strong Gd-Sm exchange, suggesting that the SmN moment might be further reduced by about 0.5 % Gd substitution.

cond-mat.mtrl-sci↗

arXiv2012

Optical Response of DyN

We report measurements of the optical response of polycrystalline DyN thin films. The frequency-dependent complex refractive index in the near IR-visible-near UV was determined by fitting reflection/transmission spectra. In conjunction with resistivity measurements these identify DyN as a semiconductor with 1.2 eV optical gap. When doped by nitrogen vacancies it shows free carrier absorption and a blue-shifted gap associated with the Moss-Burstein effect. The refractive index of 2.0+/-0.1 depends only weakly on energy. Far infrared reflectivity data show a polar phonon of frequency 280 cm-1 and dielectric strength delta epsilon= 20.

cond-mat.mtrl-sci↗