Pressure-Driven Metallicity in {\AA}ngstr\"om-Thickness 2D Bismuth and Layer-Selective Ohmic Contact to MoS2

Shuhua Wang; Shibo Fang; Qiang Li; Yunliang Yue; Zongmeng Yang; Xiaotian Sun; Jing Lu; Chit Siong Lau; L. K. Ang; Lain-Jong Li; Yee Sin Ang

arXiv · 2506.05133

Pressure-Driven Metallicity in {\AA}ngstr\"om-Thickness 2D Bismuth and Layer-Selective Ohmic Contact to MoS2

Shuhua Wang·Shibo Fang·Qiang Li·Yunliang Yue·Zongmeng Yang·Xiaotian Sun·Jing Lu·Chit Siong Lau·L. K. Ang·Lain-Jong Li·Yee Sin Ang

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Abstract

Recent fabrication of two-dimensional (2D) metallic bismuth (Bi) via van der Waals (vdW) squeezing method opens a new avenue to ultrascaling metallic materials into the {\aa}ngstr\"om-thickness regime [Nature 639, 354 (2025)]. However, freestanding 2D Bi is typically known to exhibit a semiconducting phase [Nature 617, 67 (2023), Phys. Rev. Lett. 131, 236801 (2023)], which contradicts with the experimentally observed metallicity in vdW-squeezed 2D Bi. Here we show that such discrepancy originates from the pressure-induced buckled-to-flat structural transition in 2D Bi, which changes the electronic structure from semiconducting to metallic phases. Based on the experimentally fabricated MoS2-Bi-MoS2 trilayer heterostructure, we demonstrate the concept of layer-selective Ohmic contact in which one MoS2 layer forms Ohmic contact to the sandwiched Bi monolayer while the opposite MoS2 layer exhibits a Schottky barrier. The Ohmic contact can be switched between the two sandwiching MoS2 monolayers by changing the polarity of an external gate field, thus enabling charge to be spatially injected into different MoS2 layers. The layer-selective Ohmic contact proposed here represents a layertronic generalization of metal/semiconductor contact, paving a way towards layertronic device application.

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Shuhua Wang, Shibo Fang, Qiang Li, Yunliang Yue, Zongmeng Yang, Xiaotian Sun, Jing Lu, Chit Siong Lau, L. K. Ang, Lain-Jong Li, Yee Sin Ang. 2025-06-05. Pressure-Driven Metallicity in {\AA}ngstr\"om-Thickness 2D Bismuth and Layer-Selective Ohmic Contact to MoS2. https://arxiv.org/abs/2506.05133

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