arXiv subjects

Zongmeng Yang

Publications and source records attributed to Zongmeng Yang.

7 recordsLinked to original sources

arXiv2026

Pure Spin Photocurrent in Altermagnetic Photovoltaic Battery

Altermagnets, featuring momentum-dependent spin splitting without net magnetization, provide a promising platform for spintronic functionalities beyond conventional ferromagnets and antiferromagnets. Here, we propose an altermagnetic spin photovoltaic battery consisting of a nonmagnetic semiconducting layer sandwiched between two altermagnetic electrodes. Using first-principles quantum-transport simulations, we show that a V2Te2O/ZnSe/V2Te2O junction supports a pure spin photocurrent for opposite N\'eel vectors in the two altermagnetic electrodes, with spin-up and spin-down photocurrents equal in magnitude and opposite in sign. The effect persists under both linearly and circularly polarized light and remains tunable with photon energy and polarization angle. Our results establish a realistic route toward light-driven pure spin-current generation in altermagnetic junctions.

cond-mat.mes-hall↗

arXiv2025

Altermagnetic Flatband-Driven Fermi Surface Geometry for Giant Tunneling Magnetoresistance

Altermagnetism, characterized by zero net magnetization and symmetry-protected spin-split band structures, has recently emerged as a promising platform for spintronics. In altermagnetic tunnel junctions (AMTJs), the suppression of tunneling in the antiparallel configuration relies on the mismatch between spin-polarized conduction channels in momentum space. However, ideal nonoverlapping spin-polarized Fermi surfaces are rarely found in bulk altermagnets. Motivated by the critical influence of Fermi surface geometry on tunneling magnetoresistance (TMR), we investigate three experimentally synthesized altermagnets -- bulk $\mathrm{V_2Te_2O}$, $\mathrm{RbV_2Te_2O}$, and $\mathrm{KV_2Se_2O}$ -- to elucidate how flatband-driven Fermi surfaces minimize spin-channel overlap and boost AMTJ performance. Notably, $\mathrm{RbV_2Te_2O}$ and $\mathrm{KV_2Se_2O}$ host flat altermagnetic Fermi sheets, which confine spin degeneracy to minimal arc-like or nodal-like regions. Such Fermi surface geometry drastically reduces spin overlap, resulting in an unprecedented intrinsic TMR well over $10^3\%$ in the $\mathrm{KV_2Se_2O}$-based AMTJ. Incorporating an insulating barrier further enhances the TMR to $\sim10^6\%$, surpassing most conventional MTJs. These results not only establish $\mathrm{KV_2Se_2O}$ as a compelling candidate AMTJ material, but also highlight the critical role of flatband Fermi surface geometry in achieving high-performance altermagnetic-spintronic device technology.

cond-mat.mtrl-sci↗

arXiv2025

One-dimensional electronics with edge states in two-dimensional altermagnets

The coupling between real-space inhomogeneities coordinates and spin (r-s) provides an alternative route to achieve efficient spin manipulation in spintronics beyond the conventional momentum-spin (k-s) coupling paradigm. Here we demonstrate an unexpected manifestation of one-dimensional (1D) r-s coupling in two-dimensional (2D) altermagnetic second-order topological insulators, where the spin-split floating edge states -- energetically isolated within the bulk band gap -- emerge and exhibit both Neel-vector-dependent and electrically tunable behaviors. The 1D edge-spin r-s coupling ensures carrier transport to be exclusively carried by the edge states with quantized spin conductance, giving rise to an unconventional edge tunnel magnetoresistance (edge-TMR) effect that can be switched On or Off. As a proof of concept, we computationally design an edge-TMR device based on Cr_2Se_2O monolayer to demonstrate its edge transportation and controllability via the N\'eel order or electric field. Our findings propose a general prototype altermagnetic device for next-generation low-dimensional spintronics.

cond-mat.mes-hall↗

arXiv2025

Computational Design of Two-Dimensional MoSi$_2$N$_4$ Family Field-Effect Transistor for Future \AA ngstr\"om-Scale CMOS Technology Nodes

Advancing complementary metal-oxide-semiconductor (CMOS) technology into the sub-1-nm angstr\"om-scale technology nodes is expected to involve alternative semiconductor channel materials, as silicon transistors encounter severe performance degradation at physical gate lengths below 10 nm. Two-dimensional (2D) semiconductors have emerged as strong candidates for overcoming short-channel effects due to their atomically thin bodies, which inherently suppress electrostatic leakage and improve gate control in aggressively scaled field-effect transistors (FETs). Among the growing library of 2D materials, the MoSi$_2$N$_4$ family -- a synthetic septuple-layered materials -- has attracted increasing attention for its remarkable ambient stability, suitable bandgaps, and favorable carrier transport characteristics, making it a promising platform for next-generation transistors. While experimental realization of sub-10-nm 2D FETs remains technologically demanding, computational device simulation using first-principles density functional theory combined with nonequilibrium Green's function transport simulations provide a powerful and cost-effective route for exploring the performance limits and optimal design of ultrascaled FET. This review consolidates the current progress in the computational design of MoSi$_2$N$_4$ family FETs. We review the physical properties of MoSi$_2$N$_4$ that makes them compelling candidates for transistor applications, as well as the simulated device performance and optimization strategy of MoSi$_2$N$_4$ family FETs. Finally, we identify key challenges and research gaps, and outline future directions that could accelerate the practical deployment of MoSi$_2$N$_4$ family FET in the angstr\"om-scale CMOS era.

cond-mat.mtrl-sci↗

arXiv2025

Pressure-Driven Metallicity in {\AA}ngstr\"om-Thickness 2D Bismuth and Layer-Selective Ohmic Contact to MoS2

Recent fabrication of two-dimensional (2D) metallic bismuth (Bi) via van der Waals (vdW) squeezing method opens a new avenue to ultrascaling metallic materials into the {\aa}ngstr\"om-thickness regime [Nature 639, 354 (2025)]. However, freestanding 2D Bi is typically known to exhibit a semiconducting phase [Nature 617, 67 (2023), Phys. Rev. Lett. 131, 236801 (2023)], which contradicts with the experimentally observed metallicity in vdW-squeezed 2D Bi. Here we show that such discrepancy originates from the pressure-induced buckled-to-flat structural transition in 2D Bi, which changes the electronic structure from semiconducting to metallic phases. Based on the experimentally fabricated MoS2-Bi-MoS2 trilayer heterostructure, we demonstrate the concept of layer-selective Ohmic contact in which one MoS2 layer forms Ohmic contact to the sandwiched Bi monolayer while the opposite MoS2 layer exhibits a Schottky barrier. The Ohmic contact can be switched between the two sandwiching MoS2 monolayers by changing the polarity of an external gate field, thus enabling charge to be spatially injected into different MoS2 layers. The layer-selective Ohmic contact proposed here represents a layertronic generalization of metal/semiconductor contact, paving a way towards layertronic device application.

cond-mat.mtrl-sci↗

arXiv2025

Unconventional tunnel magnetoresistance scaling with altermagnets

In conventional magnetic tunnel junctions (MTJs), the tunnel magnetoresistance (TMR) typically increases with barrier thickness as electron transmission in the antiparallel configuration decays faster than that of the parallel configuration. In this work, we reveal an anomalous scaling effect in altermagnetic tunnel junctions (AMTJs), where the TMR decreases anomalously with an increasing barrier thickness. The anomalous scaling originates from the overlapping spin-split branches forming a transmission path that cannot be suppressed in the antiparallel state. Such phenomenon is explained by a double-barrier model and is further demonstrated using ab initio quantum transport simulations in 2D V2Te2O/Cr2Se2O/V2Te2O and V2Te2O/ZnSe/V2Te2O AMTJs. Our work identifies a peculiar unexpected transport characteristic of AMTJ, providing a fundamental limit on AMTJ device design and illustrating the potential optimal design of AMTJ at the ultrascaled monolayer limit.

cond-mat.mes-hall↗

arXiv2024

Quantum Transport Simulation of Sub-1-nm Gate Length Monolayer MoS2 Transistors

Sub-1-nm gate length $MoS_2$ transistors have been experimentally fabricated, but their device performance limit remains elusive. Herein, we explore the performance limits of the sub-1-nm gate length monolayer (ML) $MoS_2$ transistors through ab initio quantum transport simulations. Our simulation results demonstrate that, through appropriate doping and dielectric engineering, the sub-1-nm devices can meet the requirement of extended 'ITRS'(International Technology Roadmap for Semiconductors) $L_g$=0.34 nm. Following device optimization, we achieve impressive maximum on-state current densities of 409 $μA / μm$ for n-type and 800 $μA / μm$ for p-type high-performance (HP) devices, while n-type and p-type low-power (LP) devices exhibit maximum on-state current densities of 75 $μA / μm$ and 187 $μA / μm$, respectively. We employed the Wentzel-Kramer-Brillouin (WKB) approximation to explain the physical mechanisms of underlap and spacer region optimization on transistor performance. The underlap and spacer regions primarily influence the transport properties of sub-1-nm transistors by respectively altering the width and body factor of the potential barriers. Compared to ML $MoS_2$ transistors with a 1 nm gate length, our sub-1-nm gate length HP and LP ML $MoS_2$ transistors exhibit lower energy-delay products. Hence the sub-1-nm gate length transistors have immense potential for driving the next generation of electronics.

physics.comp-ph↗