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arXiv · 2506.08264

Bound States at Semiconductor -- Mott Insulator Interfaces

Jan Verlage·Peter Kratzer
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Abstract

Utilizing the hierarchy of correlations in the context of a Fermi-Hubbard model, we deduce the presence of quasi-particle bound states at the interface between a Mott insulator and a semiconductor, as well as within a semiconductor-Mott-semiconductor heterostructure forming a quantum well. In the case of the solitary interface, the existence of bound states necessitates the presence of an additional perturbation with a minimal strength depending on the spin background of the Mott insulator. Conversely, within the quantum well, this additional perturbation is still required to have bound states while standing-wave solutions even exist in its absence.

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Jan Verlage, Peter Kratzer. 2025-06-09. Bound States at Semiconductor -- Mott Insulator Interfaces. https://doi.org/10.1103/ywd2-bh2w

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