arXiv subjects

Jan Verlage

Publications and source records attributed to Jan Verlage.

4 recordsLinked to original sources

arXiv2026

Enhanced Electron Reflectionat Mott-Insulator Interfaces

The Klein paradox describes an incoming electron being scattered at a supercritical barrier to create electron-positron pairs, a phenomenon widely discussed in textbooks. While demonstrating this phenomenon experimentally with the fundamental particles remains challenging, condensed matter analogs are more accessible to experimental realization. For spinless quasi-particles, theoretical works show an enhancement of the pair production rate, and analogs of this effect in condensed matter systems have been studied theoretically. Here, we present another condensed matter system, a heterostructure comprised of two materials with strongly and weakly interacting electrons, that allows for constructing analytical solutions using the hierarchy-of-correlations method. The results show enhanced electron reflection related with the production of doublon-holon pairs, as known from the Klein paradox.

cond-mat.str-el↗

arXiv2025

Bound States at Semiconductor -- Mott Insulator Interfaces

Utilizing the hierarchy of correlations in the context of a Fermi-Hubbard model, we deduce the presence of quasi-particle bound states at the interface between a Mott insulator and a semiconductor, as well as within a semiconductor-Mott-semiconductor heterostructure forming a quantum well. In the case of the solitary interface, the existence of bound states necessitates the presence of an additional perturbation with a minimal strength depending on the spin background of the Mott insulator. Conversely, within the quantum well, this additional perturbation is still required to have bound states while standing-wave solutions even exist in its absence.

cond-mat.str-el↗

arXiv2025

Transmission through multiple Mott insulator - semiconductor wells

Weakly and strongly interacting quantum many-body systems, namely semiconductors and Mott insulators, are combined into a layered heterostructure. Via the hierarchy of correlations, we derive and match the propagating quasi-particle solutions in the different regions and calculate the transmission coefficients through these layered structures. As a proof of principle, we find the well known transmission bands of a semiconductor heterostructure. Extending this idea to semiconductor and Mott insulator structures we calculate the transmittance and the resonance energies. Within a phase accumulation model we find analytical expressions for the scattering phase shift. Lastly, we find transmission curves with skewness for structures with applied voltage.

cond-mat.str-el↗

arXiv2023

Quasi-particle propagation across semiconductor-Mott insulator interfaces

As a prototypical example for a heterostructure combining a weakly and a strongly interacting quantum many-body system, we study the interface between a semiconductor and a Mott insulator. Via the hierarchy of correlations, we derive and match the propagating or evanescent (quasi) particle solutions on both sides and assume that the interactions among the electrons in the semiconducting regions can be absorbed by an effective potential. While the propagation is described by a band-like dispersion in both the weakly and the strongly interacting case, the inverse decay length across the interface follows a different dependence on the band gap in the Mott insulator and the semiconductor. As one consequence, tunnelling through a Mott insulating layer behaves quite differently from a semiconducting (or band insulating) layer. For example, we find a strong suppression of tunnelling for energies in the middle between the upper and lower Hubbard band of the Mott insulator.

cond-mat.str-el↗