Engineering Cryogenic FETs: Addressing SCEs and Impact of Interface Traps Down to 2 K Temperature

Abstract

This paper presents the design and benchmarking of cryogenic bulk-FETs using an experimentally calibrated TCAD framework that integrates 2-D electrostatics and interface-trap effects from $T = 2$ K to 300 K. For a 28-nm node device, carrier transport is predominantly ballistic at $T = 2$ K and becomes quasi-ballistic as temperature increases. At cryogenic temperatures, higher interface-trap densities increase the effective threshold voltage and suppress subthreshold conduction. However, when the ON-state bias is adjusted to account for the trap-induced $V_t$ shift, interface traps are found to \emph{worsen} $I_{\mathrm{ON}}/I_{\mathrm{OFF}}$ along with degrading the subthreshold swing (SS) and reducing mobility across all temperatures. The spatial standard deviation $\sigma$ of the trap distribution modulates these behaviors: highly localized traps ($\sigma \sim 1$--$2$ nm) exacerbate short-channel effects (SCEs), whereas broader, nearly uniform distributions ($\sigma \ge 50$ nm) elevate the entire barrier and suppress SCEs until saturation as $\sigma \to L_g$. The TCAD predictions closely match experimental data at 4.2 K, 77 K, and 300 K, providing design guidelines to optimize $I_{\mathrm{ON}}/I_{\mathrm{OFF}}$, SS, mobility, and DIBL for cryogenic CMOS technology nodes.