arXiv subjects

Nilesh Pandey

Publications and source records attributed to Nilesh Pandey.

18 recordsLinked to original sources

arXiv2026

Stellar contents and Star Formation in IRAS 18456-0223

We use various analytical techniques to study Young Stellar Objects (YSOs) in an area of approximately $10' \times 10'$ in the IRAS 18456-0223 star-forming region. We use archival optical (Gaia DR3) and infrared (2MASS, UKIDSS, Spitzer, WISE, and Herschel) data, along with our optical spectroscopy of three bright stars for this purpose. We identify 89 YSOs (80 Class II and 9 Class I) based on their infrared properties. Our multiwavelength SED fits of selected YSOs show that they have masses $\sim 0.1$--$7.2$ $M_\odot$ and are up to $4$ Myr old. Our Minimum Spanning Tree (MST) analysis shows that these YSOs, situated at around 600 pc, form clusters with radial extents of order 0.5 pc and mean surface densities of $\sim 60$ pc$^{-2}$. We compare UKIDSS and 2MASS data of the YSOs and find that some of them show variability. We construct maps based on Herschel data which reveal multiple column density peaks ($N_{\rm H_2} \sim 10^{22}$ cm$^{-2}$) embedded in cold ($T_d \sim 10$--$13$ K) filaments. Our near-infrared extinction map exhibits several high-$A_V$ peaks, some of which coincide with the sub-mm column density maxima. Using our optical spectra of three bright sources, we show that they are of A--K spectral type. One star shows the Li I 6707 Å line, indicating its youth.

astro-ph.SR↗

arXiv2025

Engineering Cryogenic FETs: Addressing SCEs and Impact of Interface Traps Down to 2 K Temperature

This paper presents the design and benchmarking of cryogenic bulk-FETs using an experimentally calibrated TCAD framework that integrates 2-D electrostatics and interface-trap effects from $T = 2$ K to 300 K. For a 28-nm node device, carrier transport is predominantly ballistic at $T = 2$ K and becomes quasi-ballistic as temperature increases. At cryogenic temperatures, higher interface-trap densities increase the effective threshold voltage and suppress subthreshold conduction. However, when the ON-state bias is adjusted to account for the trap-induced $V_t$ shift, interface traps are found to \emph{worsen} $I_{\mathrm{ON}}/I_{\mathrm{OFF}}$ along with degrading the subthreshold swing (SS) and reducing mobility across all temperatures. The spatial standard deviation $σ$ of the trap distribution modulates these behaviors: highly localized traps ($σ\sim 1$--$2$ nm) exacerbate short-channel effects (SCEs), whereas broader, nearly uniform distributions ($σ\ge 50$ nm) elevate the entire barrier and suppress SCEs until saturation as $σ\to L_g$. The TCAD predictions closely match experimental data at 4.2 K, 77 K, and 300 K, providing design guidelines to optimize $I_{\mathrm{ON}}/I_{\mathrm{OFF}}$, SS, mobility, and DIBL for cryogenic CMOS technology nodes.

physics.app-ph↗

arXiv2025

Three-Dimensional Electrostatic and Quantum-Confinement Modeling of Silicon Nanowire Double Quantum Dots

We present a three-dimensional simulation study of silicon nanowire double quantum dots (DQDs) with leads at T = 2 K, which extends beyond traditional effective mass or quasi-1D and quasi-2D approaches typically applied to bulk or planar geometries. A 3-D Poisson solver is self-consistently coupled to 2-D Schrodinger along slices normal to transport (width * thickness) to obtain spatially varying subbands and wavefunctions at T = 2 K. The slice approximation is justified by the large aspect ratio (Ltot/W > 20) and by the small (< 1.2 percent) wavefunction variation observed along the transport direction. The resulting effective conduction-band profile is imported into a full-wave, open-boundary Schrodinger solver to compute the transmission spectrum T(E), and the tunnel coupling (tc) is evaluated from the bonding and antibonding splitting of the first two resonances in T(E). The simulations show that narrow dots (W = 5 nm) provide strong confinement and robust single-electron localization but require higher plunger-gate voltage, whereas wider dots (W = 20 nm) load electrons at lower bias but form shallower, more delocalized states. The tunnel coupling decreases as the dot width and length are increased, due to the reduced wavefunction overlap between the dots, and saturates once W > 2LPG, when longitudinal confinement is dominated by the plunger gate length. The simulated tunnel coupling trend agrees with experimental data reported for the Si DQD device.

cond-mat.mes-hall↗

arXiv2024

Engineering Si-Qubit MOSFETs: A Phase-Field Modeling Approach Integrating Quantum-Electrostatics at Cryogenic Temperatures

This study employs advanced phase-field modeling to investigate Si-based qubit MOSFETs, integrating electrostatics and quantum mechanical effects. We adopt a comprehensive modeling approach, utilizing full-wave treatment of the Schrodinger equation solutions, coupled with the Poisson equation at cryogenic temperatures. Our analysis explores the influence of interface traps on quantum dot (QD) barrier heights, affecting coupling due to tunneling. A wider trap distribution leads to the decoupling of quantum dots. Furthermore, the oscillations in the transmission and reflection coefficients increase as the plunger/barrier gate length increases, reducing the coupling between the QDs. By optimizing plunger and barrier gate dimensions, spacer configurations, and gap oxide lengths, we enhance control over quantum well depths and minimize unwanted wave function leakage. The modeling algorithm is also validated against the experimental data and can accurately capture the oscillations in the Id Vgs caused by the Coulomb blockade at cryogenic temperature

quant-ph↗

arXiv2024

Schwinger-Keldysh path integral formalism for a Quenched Quantum Inverted Oscillator

In this work, we study the time-dependent behaviour of quantum correlations of a system of an inverted oscillator governed by out-of-equilibrium dynamics using the well-known Schwinger-Keldysh formalism in presence of quantum mechanical quench. Considering a generalized structure of a time-dependent Hamiltonian for an inverted oscillator system, we use the invariant operator method to obtain its eigenstates and continuous energy eigenvalues. Using the expression for the eigenstates, we further derive the most general expression for the generating function as well as the out-of-time-ordered correlators (OTOC) for the given system using this formalism. Further, considering the time-dependent coupling and frequency of the quantum inverted oscillator characterized by quench parameters, we comment on the dynamical behaviour, specifically the early, intermediate and late time-dependent features of the OTOC for the quenched quantum inverted oscillator. Next, we study a specific case, where the system of inverted oscillator exhibits chaotic behaviour by computing the quantum Lyapunov exponent from the time-dependent behaviour of OTOC in presence of the given quench profile.

hep-th↗

arXiv2024

Feature Selection using the concept of Peafowl Mating in IDS

Cloud computing has high applicability as an Internet based service that relies on sharing computing resources. Cloud computing provides services that are Infrastructure based, Platform based and Software based. The popularity of this technology is due to its superb performance, high level of computing ability, low cost of services, scalability, availability and flexibility. The obtainability and openness of data in cloud environment make it vulnerable to the world of cyber-attacks. To detect the attacks Intrusion Detection System is used, that can identify the attacks and ensure information security. Such a coherent and proficient Intrusion Detection System is proposed in this paper to achieve higher certainty levels regarding safety in cloud environment. In this paper, the mating behavior of peafowl is incorporated into an optimization algorithm which in turn is used as a feature selection algorithm. The algorithm is used to reduce the huge size of cloud data so that the IDS can work efficiently on the cloud to detect intrusions. The proposed model has been experimented with NSL-KDD dataset as well as Kyoto dataset and have proved to be a better as well as an efficient IDS.

cs.LG↗

arXiv2023

Circuit Complexity in an interacting quenched Quantum Field Theory

In this work, we explore the effects of a quantum quench on the circuit complexity for a quenched quantum field theory having weakly coupled quartic interaction. We use the invariant operator method, under a perturbative framework, for computing the ground state of this system}. We give the analytical expressions for specific reference and target states using the ground state of the system. Using a particular cost functional, we show the analytical computation of circuit complexity for the quenched and interacting field theory. Further, we give a numerical estimate of circuit complexity with respect to the quench rate, $δt$ for two coupled oscillators. The parametric variation of the unambiguous contribution of the circuit complexity for an arbitrary number of oscillators has been studied with respect to the dimensionless parameter $(t/δt$). We comment on the variation of circuit complexity for different values of coupling strength, different number of oscillators, and even in different dimensions.

hep-th↗

arXiv2023

Causality Constraint on Circuit Complexity from $COSMOEFT$

In this article, we investigate the physical implications of the causality constraint via effective sound speed $c_s(\leq 1)$ on Quantum Circuit Complexity(QCC) in the framework of Cosmological Effective Field Theory (COSMOEFT) using the two-mode squeezed quantum states. This COSMOEFT setup is constructed using the St$\ddot{\text{u}}$ckelberg trick with the help of the lowest dimensional operators, which are broken under time diffeomorphism. In this setup, we consider only the contribution from two derivative terms in the background quasi de Sitter metric. Next, we compute the relevant measures of circuit complexity and their cosmological evolution for different $c_s$ by following two different approaches, Nielsen's and Covariance matrix method. Using this setup, we also compute the Von-Neumann and Rényi entropy, which finally establishes an underlying connecting relationship between the entanglement entropy and circuit complexity. Essentially, we study the behaviour of the circuit complexity measures and entanglement entropy with respect to the scale factor and $c_s$ and find various interesting unexplored features within the window, $0.024\leq c_s\leq 1$, which is supported by both causality and cosmological observation. Finally, we also comment on the connection between the circuit complexity, entanglement entropy and equilibrium temperature for different $c_s$ lying within the mentioned window.

hep-th↗

arXiv2022

Circuit Complexity in $\mathcal{Z}_{2}$ ${\cal EEFT}$

Motivated by recent studies of circuit complexity in weakly interacting scalar field theory, we explore the computation of circuit complexity in $\mathcal{Z}_2$ Even Effective Field Theories ($\mathcal{Z}_2$ EEFTs). We consider a massive free field theory with higher-order Wilsonian operators such as $ϕ^{4}$, $ϕ^{6}$ and $ϕ^8.$ To facilitate our computation we regularize the theory by putting it on a lattice. First, we consider a simple case of two oscillators and later generalize the results to $N$ oscillators. The study has been carried out for nearly Gaussian states. In our computation, the reference state is an approximately Gaussian unentangled state, and the corresponding target state, calculated from our theory, is an approximately Gaussian entangled state. We compute the complexity using the geometric approach developed by Nielsen, parameterizing the path ordered unitary transformation and minimizing the geodesic in the space of unitaries. The contribution of higher-order operators, to the circuit complexity, in our theory has been discussed. We also explore the dependency of complexity with other parameters in our theory for various cases.

hep-th↗

arXiv2022

Four-mode squeezed states in de Sitter space: A study with two field interacting quantum system

In this paper we study the application of four-mode squeezed states in the cosmological context, studying two weakly coupled scalar fields in the planar patch of the de Sitter space. We construct the four-mode squeezed state formalism and connect this concept with the Hamiltonian of the two coupled inverted harmonic oscillators having a time-dependent effective frequency in the planar patch of the de Sitter space. Further, the corresponding evolution operator for the quantum Euclidean vacuum state has been constructed, which captures its dynamics. Using the Heisenberg picture coupled differential equations describing the time evolution for all squeezing parameters (amplitude, phase and angle) have been obtained, for the weakly coupled two scalar field model. With the help of these evolutions for the coupled system, we simulate the dynamics of the squeezing parameters in terms of conformal time. From our analysis, we observe interesting dynamics, which helps us to explore various underlying physical implications of the weakly coupled two scalar field system in the planar patch of the de Sitter cosmological background.

gr-qc↗

arXiv2022

Entanglement in interacting quenched two-body coupled oscillator system

In this work, we explore the effects of a quantum quench on the entanglement measures of a two-body coupled oscillator system having quartic interaction. We use the invariant operator method, under a perturbative framework, for computing the ground state of this system. We give the analytical expressions for the total and reduced density matrix of the system having non-Gaussian, quartic interaction terms. Using this reduced density matrix, we show the analytical calculation of two entanglement measures viz., Von Neumann entanglement entropy using replica trick and Renyi entanglement entropy. Further, we give a numerical estimate of these entanglement measures with respect to the dimensionless parameter $(t/δt$) and show its behaviour in the three regimes, i.e; late time behaviour, around the quench point and the early time behaviour. We comment on the variation of these entanglement measures for different orders of coupling strength. The variation of Renyi entropy of different orders has also been discussed.

hep-th↗

arXiv2022

Static negative susceptibility in ferromagnetic material induced by domain wall motion: an aspect of superconductor state

Domain wall motion in magnetic materiel induces the negative susceptibility leading to a perfect diamagnetism state. The local susceptibility is calculated by the derivative of magnetization ($\vec{M}$) vector w.r.t. magnetic field strength ($\vec{H}$) vector. In the transient region from the upward domain to the downward domain (domain wall width), local $\vec{M}$ and $\vec{H}$ vectors exhibit opposite slopes, which leads to a negative susceptibility value. A negative susceptibility value induces the diamagnetism effect leading to a relative permeability value $<$ 1 $\left(μ_r < 1\right)$. This diamagnetism sate originates due to the domain wall motion, which is an entirely different mechanism from the electron motion's induced diamagnetism. Furthermore, the strength of the diamagnetism state can be enhanced by tuning the gradient energy of a domain that may correspond to a perfect diamagnetism state $\left(χ_v \approx -1 \Rightarrow μ_r \rightarrow 0\right)$. Besides, we believe that there may be a possibility of sustaining such a diamagnetic state (domain wall induced) in a ferromagnetic material that is utterly contradictory to the conventional theory.

physics.app-ph↗

arXiv2022

Physics and modeling of multi-domain FeFET with domain wall induced Negative Capacitance

In this paper, we present the dynamics and modeling of multi-domains in the ferroelectric FET (FeFET). Due to the periodic texture of domains, the electrostatics of the FeFET exhibit an oscillatory conduction band profile. To capture such oscillations, we solve coupled 2-D Poisson's equation with the net ferroelectric energy density (gradient energy + free energy + depolarization energy) equation. Multi-domain dynamics are captured by minimizing the net ferroelectric energy leading to a thermodynamically stable state. Furthermore, we show that the motion of domain walls originates local bound charge density in the ferroelectric region, which induces the negative capacitance (NC) effect. The strength of domain wall-induced NC is determined by the gradient energy of the ferroelectric material. FeFET exhibits variability in the drain current with domain period due to the inherent NC effect. Additionally, the impact of domain wall transition (soft$\rightleftharpoons$hard) on the device's electrostatic/transport is also analyzed. The model also accurately captures both nucleations of a new domain and the motion of the domain wall. Furthermore, the model is thoroughly validated against experimental results and phase-field simulations.

physics.app-ph↗

arXiv2022

Dynamics of Multi-Domains in Ferroelectric Tunnel Junction

The Discovery of giant tunnel electroresistance (TER) in Ferroelectric Tunnel Junction (FTJ) paves a futuristic possibility of utilizing the FTJ as a bistable resistive device with an enormously high ON/OFF ratio. In the last 20 years, numerous studies have reported that the formation of multidomain in ferroelectric material is an inevitable process to minimize the total system energy. Recent studies based on phase-field simulations have demonstrated that domain nucleation/motion substantially alters the electrostatics of a ferroelectric material. However, the impact of domain dynamics on quantum transport in FTJ remains elusive. This paper presents a comprehensive study of multidomain dynamics in a ferroelectric tunnel junction. Analysis of this article is twofold; firstly, we study the impact of domain dynamics on electrostatics in an FTJ. Subsequently, the obtained electrostatics is used to study the variations in tunneling current, and TER originated from multidomain dynamics. We show that ON/OFF current density and TER vary locally in the ferroelectric region. Furthermore, the device's electrostatics and quantum transport exhibit an oscillatory nature due to periodic domain texture. ON/OFF current density shows a sine/cosine distribution in ferroelectric, and approximately one-decade local variation in current density is observed. These local fluctuations in current density cause oscillations in the device's ON/OFF ratio. Optimization techniques to achieve a uniform and maximum TER are also discussed. A 2D analytical and explicit model is derived by solving coupled 2D Poisson's equation and Landau-Ginzburg equation. The model incorporates the switching and nucleation of domains by minimizing net ferroelectric energy (depolarization+free+gradient energy density). Furthermore, the impact of the bottom insulator layer on ferroelectric's gradient energy is also studied.

physics.app-ph↗

arXiv2021

Extreme Face Inpainting with Sketch-Guided Conditional GAN

Recovering badly damaged face images is a useful yet challenging task, especially in extreme cases where the masked or damaged region is very large. One of the major challenges is the ability of the system to generalize on faces outside the training dataset. We propose to tackle this extreme inpainting task with a conditional Generative Adversarial Network (GAN) that utilizes structural information, such as edges, as a prior condition. Edge information can be obtained from the partially masked image and a structurally similar image or a hand drawing. In our proposed conditional GAN, we pass the conditional input in every layer of the encoder while maintaining consistency in the distributions between the learned weights and the incoming conditional input. We demonstrate the effectiveness of our method with badly damaged face examples.

cs.CV↗

arXiv2020

Variability Analysis in a 3-D Multi-Granular Hf$_x$Zr$_{1-x}$O$_2$ Ferroelectric Capacitor

A simulation-based study of variability of remnant polarization $\left (P_r \right)$ in a multi-granular 3-D ultra-thin ferroelectric (FE) capacitor is presented in this paper. The Poisson Voronoi Tessellation Diagram (PVD) is used for the nucleation of grains in the FE region, which corresponds to the physical growth mechanism. The PVD algorithm implemented in MATLAB is coupled with TCAD simulations, to trace the ferroelectric hysteresis loop. It is found that the grains which have linear profile of $P_r$ show larger variability in the FE hysteresis loop, compared to the grains, which follow the Gaussian distribution of $P_r$. Additionally, the impact of dielectric content in the FE grains is analyzed. It is seen that the dielectric grains cause very large amount of variability in the FE hysteresis loop. An increase in the dielectric grains also leads to a loss in the retentivity of the hysteresis loop.

physics.app-ph↗

arXiv2020

Analytical modeling and Dynamics of Multi-Domains in Negative-Capacitance MFIS-FETs

Analytical modeling and dynamics of multidomain in metal-ferroelectric-insulator-semiconductor (MFIS)-FETs are presented in this paper. The formation of multi-domain (MD) leads to oscillations in the conduction band in the channel and periodicity in the local electric field in the ferroelectric region. The impact of 2-D local electric field on the MD switching is captured in the model using the domain wall velocity concept. The optimum values of oxide thickness, ferroelectric thickness and channel length are calculated which corresponds to mono-domain device operation. Deviation from the optimum device parameters causes the transition of mono-domain state to multi-domain state in the ferroelectric. This work can be used as a guideline for designing MFIS-NCFETs, which provides the device parameters that leads to monodomain state in the MFIS-NCFET.

physics.app-ph↗

arXiv2019

Poly-GAN: Multi-Conditioned GAN for Fashion Synthesis

We present Poly-GAN, a novel conditional GAN architecture that is motivated by Fashion Synthesis, an application where garments are automatically placed on images of human models at an arbitrary pose. Poly-GAN allows conditioning on multiple inputs and is suitable for many tasks, including image alignment, image stitching, and inpainting. Existing methods have a similar pipeline where three different networks are used to first align garments with the human pose, then perform stitching of the aligned garment and finally refine the results. Poly-GAN is the first instance where a common architecture is used to perform all three tasks. Our novel architecture enforces the conditions at all layers of the encoder and utilizes skip connections from the coarse layers of the encoder to the respective layers of the decoder. Poly-GAN is able to perform a spatial transformation of the garment based on the RGB skeleton of the model at an arbitrary pose. Additionally, Poly-GAN can perform image stitching, regardless of the garment orientation, and inpainting on the garment mask when it contains irregular holes. Our system achieves state-of-the-art quantitative results on Structural Similarity Index metric and Inception Score metric using the DeepFashion dataset.

cs.CV↗